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High-speed column line readout circuit and readout method of CMOS image sensor

An image sensor and readout circuit technology, which is applied in the field of image transmission simulation, can solve the problems of long readout time of reset signal and integral signal, large parasitic, slow establishment of reset signal and integral signal, etc., and achieves easy layout and extra parasitic Effect of small size and improved readout speed

Active Publication Date: 2021-10-08
XIAN UNIV OF TECH
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Problems solved by technology

[0007] The purpose of the present invention is to provide a high-speed column line readout circuit of a CMOS image sensor, which overcomes the problem that the high-speed readout circuit of the existing large area array CMOS image sensor needs to introduce relatively large parasitic
[0008] Another object of the present invention is to provide a high-speed column line readout method of a large area array CMOS image sensor, which solves the problem of slow establishment of the reset signal and the integral signal in the signal readout process of the large area array CMOS image sensor. The problem that the readout time of the reset signal and the integrated signal is too long

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  • High-speed column line readout circuit and readout method of CMOS image sensor

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Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] Such as figure 1 As shown, it is a high-speed readout circuit of a traditional large-area CMOS image sensor. This structure introduces two row buses and an additional reference current, and the row bus will introduce larger parasitic resistance and capacitance in a large-area array. , is not suitable for the column parallel readout mechanism widely used now, and introduces a larger parasitic problem for the high-speed readout circuit of the above-mentioned large area array CMOS image sensor. The present invention proposes a high-speed column line readout of the CMOS image sensor circuit, the structure samples and processes the current from the end of the column line, the structure is relatively simple while the speed is guaranteed, the parasitic is reduced, and better performance is achieved.

[0023] The present invention is a kind o...

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Abstract

The invention discloses a high-speed column line reading circuit of a CMOS image sensor, and the circuit comprises a pixel unit, wherein the output end of the pixel unit is connected with a column line of a pixel area array, and the column line of the pixel area array is also connected with a current source Ibias, a positive plate of a sampling capacitor CS and the output end of an output transconductance amplifier OTA. A negative plate of the sampling capacitor CS is respectively connected with one end of the sampling resistor RS and an input positive phase end of the output transconductance amplifier OTA, and the current source Ibias, the other end of the sampling resistor RS and an input negative phase end of the output transconductance amplifier OTA are all grounded; the problem that a high-speed reading circuit of an existing large-area-array CMOS image sensor needs to introduce large parasitism is solved.

Description

technical field [0001] The invention belongs to the technical field of image transmission simulation, and in particular relates to a high-speed column line readout circuit of a CMOS image sensor, and also relates to a high-speed column line readout method of a large area array CMOS image sensor. Background technique [0002] The image sensor is an important part of the camera, and currently commonly used image sensors are mainly divided into CMOS image sensors and CCD image sensors. [0003] Due to the characteristics of low power consumption and high frame rate, CMOS image sensors have gained a lot of attention. With the development of high-pixel image sensors, in some high-pixel imaging, a greater requirement is placed on the frame rate of the sensor. Traditional high-pixel CMOS image sensors have been unable to meet the requirements. [0004] On this basis, others have proposed a high-speed readout circuit for a traditional large area array CMOS image sensor. The circui...

Claims

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Application Information

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IPC IPC(8): H04N5/374H04N5/378
CPCH04N25/76H04N25/75
Inventor 郭仲杰程新齐杨佳乐卢沪刘楠许睿明
Owner XIAN UNIV OF TECH