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Optically-transparent semiconductor buffer layers and structures employing the same

An optically transparent and buffer layer technology, applied in semiconductor devices, photovoltaic power generation, electrical components, etc., can solve the problems of increasing optical absorption and increasing the value of lattice constant

Pending Publication Date: 2021-10-08
阵列光子学公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Implementation of the inventive concept also solves the problem of increased optical absorption (and thus attenuation) of light of broadband in photonic structures due to the use of buffer layers: a) the use of constructed from a multicomponent material of group V elements and b) configured to allow only an increase in the value of the lattice constant during the growth of such a buffer layer

Method used

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  • Optically-transparent semiconductor buffer layers and structures employing the same
  • Optically-transparent semiconductor buffer layers and structures employing the same
  • Optically-transparent semiconductor buffer layers and structures employing the same

Examples

Experimental program
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Effect test

example 1

[0060] Example 1 (using AlP x Sb 1-x )

[0061] described in Table 1 around the AlP x Sb 1-x and configured to provide a non-limiting example of a specific metamorphic buffer layer structure that transitions between the lattice constants of GaAs and GaSb. In this and other examples, the value of "absorption edge" refers to and defines the wavelength corresponding to the spectral cutoff of absorption of a semiconductor material in which light of wavelengths shorter than the cutoff wavelength is absorbed.

[0062] Table 1 Examples of metamorphic buffer layers

[0063]

[0064]

[0065] In one case, with AlP 0.71 Sb 0.29 Composed materials are approximately lattice-matched to GaAs and have AlP 0.06 Sb 0.94 The composed material is approximately lattice-matched to GaSb. The minimum bandgaps of the metamorphic buffer layers of Table 1 vary between approximately 1.27 eV and 1.64 eV, corresponding to long wavelength absorption edges between 755 nm and 960 nm. In su...

example 2

[0068] Example 2 (using GaP x Sb 1-x ):

[0069] Table 2 shows the surrounding GaP x Sb 1-x A non-limiting example of a specific metamorphic buffer layer constructed and configured to provide a transition between the lattice constants of GaAs and GaSb.

[0070] Table 2: Examples of metamorphic buffer layers (using GaPSb)

[0071]

[0072] In one case, with GalP 0.68 Sb 0.29 The composition of the material is approximately lattice-matched to GaAs, and has GaSb 0The composition of the material is lattice matched to GaSb. The minimum bandgap of the metamorphic buffer layers of Table 2 varies between about 0.67 eV and 1.22 eV, which corresponds to a long wavelength absorption edge between 1020 nm and 1860 nm. Light having wavelengths in excess of about 1860 nm should not experience any appreciable absorption when passing through or propagating in such a metamorphic buffer layer. Therefore, this layer is practically and operationally suitable to facilitate the applic...

example 3

[0073] Example 3 (using AlAs x Sb 1-x )

[0074] Table 3 gives the surrounding AlAs x Sb 1-x and configured to provide a non-limiting example of a specific metamorphic buffer layer structure that provides a transition between the lattice constants of GaSb and GaAs.

[0075] Table 3: Examples of metamorphic buffer layers (using AlAsSb)

[0076]

[0077]

[0078] In one instance, a material with an AlSb composition is approximately lattice matched to GaSb, and a material with an AlAs composition is approximately lattice matched to GaAs. The minimum bandgaps of the metamorphic buffer layers of Table 3 vary between approximately 1.58 eV and 2.15 eV, corresponding to long wavelength absorption edges between 785 nm and 577 nm. In such a metamorphic buffer layer, light having a wavelength in excess of about 785 nm should not experience any appreciable absorption while propagating through or in such a metamorphic buffer layer. Therefore, this layer is practically and op...

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Abstract

Semiconductor structures including optically-transparent metamorphic buffer regions, devices employing such structures, and methods of fabrication are disclosed. The optically-transparent metamorphic buffer is grown to provide a lattice constant transition between a smaller lattice constant and a larger lattice constant (or vice-versa), allowing materials with two different lattice constants to be monolithically integrated. Such buffer layer may include at least two elements from group V of the periodic table. The optically- transparent metamorphic buffer region may include digital-alloy superlattice structure (s) to confine material defects to the metamorphic buffer layer, and improve electrical properties of the metamorphic buffer layer, thereby improving the electronic properties of electronic devices such as optoelectronic devices and photovoltaic cells. Photonic devices such as solar cells and optical detectors containing such semiconductor structures.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit to U.S. Provisional Patent Application No. 62 / 740,614, filed October 3, 2018, the entire disclosure of which is hereby incorporated by reference. technical field [0003] The present invention relates to layered structures comprising optically transparent semiconducting metamorphic buffer layers (or buffer layers for short), which are judiciously configured to allow these buffer layers Reliable growth on underlying substrates compared to lattice constants. Regardless of the specific value of the lattice constant of the underlying substrate, practice of the inventive concept facilitates changing or transitioning the lattice constant from that corresponding to the lattice constant of the underlying substrate to another value (the During buffer layer growth, by increasing or decreasing the lattice constant). The invention also relates to a semiconductor device comprising: a) on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0687H01L31/101
CPCH01L31/0687H01L31/03046H01L31/03048H01L31/1013Y02E10/544H01L31/06875H01L31/0693
Inventor P·多德J·索普M·谢尔顿F·苏亚雷斯
Owner 阵列光子学公司
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