Semiconductor structure and forming method of semiconductor structure
A technology of semiconductor and interconnect structure, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as poor semiconductor structure performance, reduce parasitic capacitance, reduce parasitic capacitance, reduce Effect of RC Delay
Pending Publication Date: 2021-10-12
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the performance of semiconductor structures is still poor
Method used
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[0031] As mentioned in the background, the performance of existing semiconductor structures is still poor. Now analyze and illustrate in conjunction with specific embodiment.
[0032] It should be noted that the "surface" in this specification is used to describe the relative positional relationship in space, and is not limited to direct contact.
[0033] figure 1 and figure 2 A schematic diagram of a semiconductor structure.
[0034] Please refer to figure 1 and figure 2 , figure 1 is a schematic top view of a semiconductor structure, figure 2 yes figure 1 The schematic diagram of the cross-sectional structure along the B-B1 direction, the semiconductor structure includes: a substrate 10, the substrate 10 includes a device region A; a metal interconnection layer 20 located on the device region A, the metal interconnection layer 20 It includes several first metal interconnection structures 21 and second metal interconnection structures 22 that are separated from eac...
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Abstract
The invention discloses a semiconductor structure and a forming method of the semiconductor structure, and the semiconductor structure comprises: a substrate, wherein the substrate comprises a device region, the device region comprises a plurality of first regions and second regions located between the adjacent first regions, and the first regions and the second regions are arranged along a first direction; a first interconnection structure which is located on the device region, wherein the first interconnection structure comprises a plurality of first interconnection layers and second interconnection layers, the first interconnection layers and the second interconnection layers extend in the second direction, in the second direction, the length of the first interconnection layers is larger than that of the second interconnection layers, and the first direction is perpendicular to the second direction; and third interconnection layers which are located on the first interconnection structure, and in the second direction, the length of the third interconnection layers is larger than that of the second interconnection layers. Therefore, the performance of the semiconductor structure is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a method for forming the semiconductor structure. Background technique [0002] With the continuous improvement of semiconductor integrated circuit manufacturing technology, the continuous improvement of performance is also accompanied by the process of miniaturization and miniaturization of devices. More and more advanced manufacturing processes require as many devices as possible to be implemented in as small an area as possible. [0003] In very large-scale integrated circuits, the use of metal interconnection layers is one of the methods to realize the electrical interconnection between devices. [0004] However, the performance of semiconductor structures is still poor. Contents of the invention [0005] The technical problem solved by the invention is to provide a semiconductor structure and a method for forming the semiconductor str...
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IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76847H01L21/76831H01L23/5283H01L23/5221H01L23/5222H01L23/528H01L24/13H01L21/768
Inventor 李志林
Owner SEMICON MFG INT (SHANGHAI) CORP