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Piezoelectric composite film and preparation method thereof

A technology of piezoelectric composite and thin film preparation, which is applied in piezoelectric/electrostrictive/magnetostrictive devices, material selection and circuits for piezoelectric devices or electrostrictive devices, and can solve the problem of surface acoustic wave filters. Poor stability and other problems, to achieve the effect of ensuring stability

Pending Publication Date: 2021-10-22
JINAN JINGZHENG ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a piezoelectric composite film and its preparation method to solve the problem of poor stability of the surface acoustic wave filter caused by the presence of alkali metal ions in the current piezoelectric composite film

Method used

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  • Piezoelectric composite film and preparation method thereof
  • Piezoelectric composite film and preparation method thereof
  • Piezoelectric composite film and preparation method thereof

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Embodiment Construction

[0035] The surface acoustic wave filter is composed of a piezoelectric composite film and an electrode. The electrode is made on the piezoelectric layer of the piezoelectric composite film. The cooperation between the piezoelectric layer and the electrode can convert the sound wave of a specific frequency into an electrical signal, thereby realizing the filtering function. . The currently commonly used piezoelectric composite film specifically includes a three-layer structure of a piezoelectric layer, a low acoustic resistance layer and a high acoustic resistance substrate. Among them, the piezoelectric layer is generally LN (lithium niobate, LiNiO 3 ) or LT (lithium tantalate, LiTaO 3 ) single crystal structure; the material of the low acoustic resistance layer is generally SiO 2 ; The material of the high acoustic resistance substrate is generally Si.

[0036] In the low acoustic resistance layer 200 of the current piezoelectric composite film, for example SiO 2 Layer, u...

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Abstract

The invention discloses a piezoelectric composite film and a preparation method thereof.The piezoelectric composite film specifically comprises a substrate layer, a low-acoustic-resistance layer and a piezoelectric layer which are sequentially stacked, a certain content of chloride ions are doped in the low-acoustic-resistance layer, and the chloride ions are evenly distributed in the low-acoustic-resistance layer or located in a local area in the low-acoustic-resistance layer. According to the technical scheme, the chloride ions are added, so movable alkali metal ions in the low-acoustic-resistance layer can be effectively captured, neutral chloride is formed, the influence of the alkali metal ions in the low-acoustic-resistance layer on an electromagnetic field excited by the surface acoustic wave filter is avoided, and the stability of the surface acoustic wave filter is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a piezoelectric composite thin film and a preparation method thereof. Background technique [0002] The piezoelectric composite film used in the surface acoustic wave filter specifically includes a piezoelectric layer, a low acoustic resistance layer and a high acoustic resistance substrate. figure 1 The schematic diagram of the basic structure of the current piezoelectric composite film provided by the present invention, such as figure 1 As shown, the piezoelectric layer is a functional layer, which realizes the mutual conversion of electricity and sound, and is generally a LN or LT piezoelectric single crystal structure. [0003] However, the current piezoelectric composite thin film of SiO 2 layer, there are usually some mobile positively charged alkali metal ions, such as Na + , Li + etc., where Na + It mainly comes from the Na in the air, and in the breath exhale...

Claims

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Application Information

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IPC IPC(8): H01L41/18H01L41/311H01L41/312H03H3/10H03H9/02H03H9/64
CPCH03H3/10H03H9/02834H03H9/6489H10N30/85H10N30/071H10N30/072
Inventor 李真宇朱厚彬张秀全杨超李洋洋
Owner JINAN JINGZHENG ELECTRONICS
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