Cleaning device and cleaning method

Abstract

The invention relates to a cleaning device. The cleaning device comprises a box structure with a feeding port and a discharging port, a first ultrasonic cleaning unit, a second ultrasonic cleaning unit and an ion sputtering unit, wherein the first ultrasonic cleaning unit, the second ultrasonic cleaning unit and the ion sputtering unit are located in the box structure; a moving structure used for controlling the motion state of a part to be cleaned entering from the feeding port is further arranged in the box structure; the first ultrasonic cleaning unit comprises a first containing groove used for containing ultrapure water, a first ultrasonic generation structure and a first spraying structure; the second ultrasonic cleaning unit comprises a second containing groove used for containing acid cleaning liquid, a second ultrasonic generation structure, a bubbling structure and a second spraying structure; the ion sputtering unit comprises a third containing groove, an inert gas supply structure and a voltage supply structure; and the voltage supply structure is used for providing negative voltage, so that inert gas in the third containing groove generates ions or atoms, and ion bombardment sputtering is carried out on the part to be cleaned. The invention further provides a cleaning method.

Description

technical field [0001] The invention relates to the technical field of cleaning, in particular to a cleaning device and a cleaning method. Background technique [0002] At present, the production of epitaxial wafers mostly adopts the model 300Centura epitaxial furnace. The total length of the exhaust pipe is mostly about 0.5m and the inner diameter is about 50mm. Due to the non-reverse flow of the exhaust and the limitation of space conditions, there are many bends in the pipe. structures and complex shapes. In order to prevent the above-mentioned particles from clogging the tailpipe or excessive deposition of uncompletely reacted high-activity powder, it is necessary to regularly clean and maintain the tailpipe. Due to the high activity of the sediment inside the pipeline, direct contact with air can easily cause a deflagration accident, so the tailpipe needs to be disassembled, cleaned or even replaced periodically. However, the cleaning work of the tail pipe is very dif...

AI Technical Summary

Problems solved by technology

[0003] In order to solve the above technical problems, the present invention provides a cleaning device and a cleaning method to solve the problem that the exhaust tail pipe of the epitaxial furnace is not easy to clean

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