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Heterogeneous micro-packaging method for radio frequency power amplifier chip

A radio frequency power amplifier and micro-encapsulation technology, applied in the field of radio frequency, can solve the problems of poor heat dissipation performance and poor heat dissipation effect, and achieve the effect of good heat dissipation performance

Active Publication Date: 2021-11-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of LGA package is also obvious, that is, the heat dissipation performance is not as good as that of QFN package.
This is because the main heat source, MMIC Die, cannot directly contact the package bottom plate, and the contact and heat dissipation with the bottom plate can only be realized through the PCB board and through holes with poor heat dissipation effect. In the design of RF power amplifier chips with large power capacity and large heat generation , this shortcoming cannot be ignored

Method used

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  • Heterogeneous micro-packaging method for radio frequency power amplifier chip
  • Heterogeneous micro-packaging method for radio frequency power amplifier chip
  • Heterogeneous micro-packaging method for radio frequency power amplifier chip

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Embodiment Construction

[0027] In order to facilitate those skilled in the art to understand the technical content of the present invention, the content of the present invention will be further explained below in conjunction with the accompanying drawings.

[0028] Such as figure 1 The heat energy of the power amplifier chip shown is transferred through two ways. One is the secondary way, which is transferred to the upper surface of the chip through epoxy resin, and then the heat is transferred to the air through natural convection; the second is the main way, through the BackVia , BT substrate via holes, the via holes of the application PCB are passed to the radiator pasted on the bottom of the PCB, and the heat is dissipated by air convection. Therefore, the present invention constructs the thermal resistance network of the chip based on these two approaches.

[0029] Such as figure 2 As shown, it is a flowchart of a heterogeneous micro-encapsulation method for a radio frequency power amplifier ...

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Abstract

The invention discloses a heterogeneous micro-packaging method for a radio frequency power amplifier chip, which is applied to the technical field of radio frequency and aims to solve the problem that the service life is not considered during hole arrangement in the conventional packaging technology. The heat dissipation through holes are optimized through the simulation technology, so that the optimized heat dissipation through hole layout meets the related parameter performance of chip packaging, and the radio frequency performance and the heat dissipation problem of the chip packaging are effectively balanced.

Description

technical field [0001] The invention belongs to the field of radio frequency technology, in particular to a heterogeneous micro-encapsulation technology for radio frequency power amplifier chips. Background technique [0002] A radio frequency power amplifier is a radio frequency device that can amplify the power of an input radio frequency signal and output it. With the continuous development of modern wireless communication systems, RF power amplifier chips are also developing towards higher operating frequencies and smaller volumes. As the core component of wireless transmitters in modern wireless communication systems, their importance is self-evident. . [0003] Chip packaging technology plays the role of placing, fixing, sealing, protecting chips and enhancing electrothermal performance. Because the bare chip of the chip must be isolated from the outside world to prevent the impact and damage of the chip circuit in the external environment and cause electrical perfor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/392G06F111/06G06F115/12G06F119/04G06F119/08
CPCG06F30/392G06F2111/06G06F2119/08G06F2115/12G06F2119/04
Inventor 李镇兵李泽华孙浩洋文光俊
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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