Micro light emitting diode display device and manufacturing method thereof
A technology of micro-light-emitting diodes and display devices, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., and can solve problems such as high difficulty and increased manufacturing process costs
Active Publication Date: 2021-12-28
罗化芯显示科技开发(江苏)有限公司
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, due to the reduction in the size of the LED chip itself, a significant change in the structure of the display screen is brought about, followed by a more difficult manufacturing process and an increase in cost
Method used
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[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.
[0033] Such as Figure 1 to Figure 7 As shown, this embodiment provides a method for manufacturing a micro-light-emitting diode display device, including the following steps:
[0034] In a specific example, such as figure 1 As shown, in step (1), a first substrate 100 is provided, on which an N-type semiconductor layer 101 , an active light-emitting layer 102 , a P-type semiconductor layer 103 and a transparent conductive layer 104 are sequentially grown.
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Abstract
The invention relates to a micro light emitting diode display device and a manufacturing method thereof. performing etching on the four sides of each of the micro light emitting diode units to form a plurality of through holes on each side, and then depositing a dielectric material layer to cover the sides of each of the micro light emitting diode units walls and an upper surface, and the dielectric material layer has an opening exposing the N-type semiconductor layer of each of the micro light emitting diode units. Next, a metal material layer is deposited to cover the sidewall and upper surface of each micro-LED unit and fill the through hole, and then the metal material layer is etched to form electrical lead-out structures arranged at intervals. and a heat extraction structure, the electrical extraction structure is electrically connected to the N-type semiconductor layer, and the heat extraction structure surrounds the electrical extraction structure.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a micro light-emitting diode display device and a manufacturing method thereof. Background technique [0002] The structure of the most traditional LCD liquid crystal display is provided with a backlight layer. Due to the existence of the backlight layer, the LCD screen will light up in various colors. If the LED chips in the backlight layer are made very small, such as the 12.9-inch iPad Pro, the backlight layer consists of more than 10,000 LEDs, that is, the screen uses miniLED technology. If the LED is made smaller, less than 50 μm, and the size of the pixel level is achieved, then this LED is called a microLED. [0003] However, when each LED chip in the backlight layer corresponds to a pixel, in terms of the principle of light emission, the microLED screen in the general definition will be closer to the OLED screen, and each pixel can also be regarded as "self-illumi...
Claims
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IPC IPC(8): H01L27/15H01L33/64H01L33/62
CPCH01L27/156H01L33/64H01L33/62H01L2933/0066H01L2933/0075
Inventor 罗雪方盛衍陈文娟罗子杰
Owner 罗化芯显示科技开发(江苏)有限公司