Preparation method of composite deposition layer of wafer cutting blade

Abstract

The invention discloses a preparation method of a composite deposition layer of a wafer cutting blade. The preparation method specifically comprises the following steps: mounting a plurality of annular blades serving as deposition substrates on a deposition tool at equal intervals from top to bottom, and dividing the annular blades into deposition surfaces and non-deposition surfaces; separating two nickel anodes on the two sides of an electroplating bath through partition plates, filling the space between the two partition plates with electroplating liquid, and rotatably arranging the deposition tool in the electroplating liquid, adding diamond particles into the electroplating liquid, and covering the non-deposition surfaces with baffles and serving as a circuit interface of a cathode; and in the electroplating process, controlling the PH, the current density and the rotation frequency of the electroplating liquid, so that diamond particles uniformly grow on the deposition surfaces, and in the step S2, synchronously performing vortex type stirring on the electroplating liquid by the deposition tool in the rotation process. The growth uniformity of diamond on the annular blades is improved.

Description

Technical field: [0001] The invention relates to the technical field of producing a wafer cutting blade, in particular to a method for preparing a composite deposition layer of a wafer cutting blade. Background technique: [0002] In recent years, as a variety of miniaturized electronic products, especially SIP, IC cards and RFID terminal products for mobile communication products, have been officially launched on the market, products with a chip thickness below 100um are increasingly becoming practical in the market , with the continuous expansion of customer demand for final products, the importance of wafer processing technology is also gradually increasing. At present, when processing wafers, wafer dicing blades are mainly used to process and cut wafers. The production process of wafer dicing blades is generally It needs to go through steps such as pretreatment, composite deposition, semi-finished product inspection, and outer cylindrical grinding. Among them, composite ...

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Problems solved by technology

[0002] In recent years, as a variety of miniaturized electronic products, especially SIP, IC cards and RFID terminal products for mobile communication products, have been officially launched on the market, products with a chip thickness below 100um are increasingly becoming practical in the market , with the continuous expansion of customer demand for final products, the importance of wafer processing technology is also gradually increasing. At present, when processing wafers, wafer dicing blades are mainly used to process and cut wafers. The production process of wafer dicing blades is generally It needs to go through steps such as pretreatment, composite deposition, semi-finished product inspection, and outer cylindrical grinding. Among them, composite deposition is to grow diamond particles on the ring blade, generally using an electrodeposition process. However, in the actual electroplating process, diamond particles are in the ring. The growth deposition on the blade is relatively random, which leads to the uneven thickness of the ring blade after diamond growth, which increases the difficulty of subsequent processing of the ring blade

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