Semiconductor device having bent gate eletrode and process for production thereof

Abstract

A semiconductor device comprising, on a semiconductor substrate, an element-isolating region, an active region, and a gate electrode with a bent portion having a bent-angle theta on the active region. The boundary between the element-isolating region and the active region intersects the gate electrode so that the line segments of the boundary at which said intersection takes place, are approximately parallel to the bisector of the bent-angle theta of the bent portion of the gate electrode. In this semiconductor device, the variation in width of gate electrode is small and accordingly the variation in properties is small, even when the relative position of gate electrode and active region of MOSFET has shifted slightly.

Description

technical field [0001] The invention relates to a semiconductor device with a curved gate, in particular to a semiconductor device with a MOSFET with a curved gate. Background technique [0002] MOSFETs with curved gates have been used to meet production, characterization and layout requirements. Such as Figure 12 As shown, in order to form the impurity implantation regions 39a and 39b in the active region, when using the gate 33 as a mask to perform ion implantation slightly obliquely, a non-implantation region is left between the gate 33 and the impurity implantation region 39a, As a result, an asymmetry occurs between regions 39a and 39b. Therefore, JP-A-2-250332 discloses that when the gate electrode 33 is formed on the active region 34 in a shape bent at 90°, as Figure 13 As shown, even when the ion implantation is performed slightly obliquely, no shadow occurs near the gate electrode 33, and the symmetry is improved. [0003] The large gate width results in a decr...

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Problems solved by technology

Impaired balance characteristics of transistors

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