A method for preparing gallium oxide by treating gallium nitride waste by acid method

A technology of gallium nitride and gallium oxide, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of large waste gas and dust environmental pollution, large consumption of reagents, low recovery rate of gallium, etc. Achieve the effect of low recycling cost, short treatment process and good leaching effect

Active Publication Date: 2022-07-19
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the problems of long process flow, large consumption of reagents, low recovery rate of gallium, and large environmental pollution caused by waste gas and dust when the existing process is used to treat gallium nitride waste, and provides an acid method for nitrogen treatment. Method for preparing gallium oxide from gallium chloride waste

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A method for preparing gallium oxide by treating gallium nitride waste by acid method in this embodiment specifically includes the following steps:

[0042] (1) Under normal temperature conditions, prepare H 2 SO 4 An acid solution system with a concentration of 1 mol / L (hydrogen ion concentration of 2 mol / L).

[0043] (2) Ball-milling the gallium nitride waste powder to below 300 μm in advance, and drying at 120° C. for 96 hours; adding the fully dried and ground gallium nitride waste powder to the acid solution prepared in step (1), and stirring continuously at room temperature Pre-dipping was carried out for 1 h, and the stirring speed was 200 rpm to obtain a mixed slurry.

[0044] (3) Under the condition of mechanical stirring, slowly add 500 mL of H with a concentration of 30% to the mixed slurry in step (2). 2 O 2 The chlorine-containing composite oxidant prepared with 25g NaClO, the dropping rate is 60ml / min, after the oxidant is added, the reaction is contin...

Embodiment 2

[0051] A method for preparing gallium oxide by treating gallium nitride waste by acid method in this embodiment specifically includes the following steps:

[0052] (1) Under normal temperature conditions, prepare an acid solution system with a HCl concentration of 5 mol / L (hydrogen ion concentration of 5 mol / L).

[0053] (2) Ball mill the gallium nitride waste powder to below 300 μm in advance, and dry it at 160° C. for 24 hours; add the fully dried and ground gallium nitride waste powder into the acid solution prepared in step (1), and keep stirring at room temperature Pre-dipping was carried out for 4 hours, and the stirring speed was 500 rpm to obtain a mixed slurry.

[0054] (3) Under the condition of mechanical stirring, slowly add 500 mL of H with a concentration of 30% to the mixed slurry in step (2). 2 O 2 The chlorine-containing composite oxidant prepared with 35g NaClO, the dropping rate is 90ml / min, after the oxidant is added, the reaction is continued for 2h, the...

Embodiment 3

[0061] An acid treatment of gallium nitride waste to prepare gallium oxide in this embodiment specifically includes the following steps:

[0062] (1) Under normal temperature conditions, prepare HNO 3 An acid solution system with a concentration of 3 mol / L (hydrogen ion concentration of 3 mol / L).

[0063] (2) Ball mill the gallium nitride waste powder to less than 300 μm in advance, and dry it at 130°C for 48 hours; add the fully dried and ground gallium nitride waste powder into the acid solution prepared in step (1), and keep stirring at room temperature 2h was pre-dipped, and the stirring speed was 300 rpm to obtain a mixed slurry.

[0064] (3) Under the condition of mechanical stirring, slowly add 500 mL of H with a concentration of 30% to the mixed slurry in step (2). 2 O 2 with 30g NaClO 3 The prepared chlorine-containing composite oxidant has a dropping rate of 70ml / min. After the oxidant is added, the reaction is continuously stirred for 3 hours. The stirring speed...

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Abstract

The invention discloses a method for preparing gallium oxide by treating gallium nitride waste by an acid method, and belongs to the technical field of non-ferrous metal metallurgy. In the present invention, the gallium nitride waste is first oxidized and leached by adding an oxidant and a chloride-containing salt into the acid system under normal pressure conditions, so that the gallium is dissolved into the leaching solution, and the nitrogen is oxidized into N which is friendly to the environment. 2 Enter the gas phase to achieve effective separation of gallium and nitrogen; then neutralize the gallium-containing leaching solution to make gallium as Ga(OH) 3 form precipitation, and further calcined to obtain gallium oxide (β-Ga 2 O 3 )product. The technical solution of the present invention can effectively process the stable gallium nitride waste, and finally obtain gallium oxide (β-Ga 2 O 3 ) product, the whole process does not involve high temperature and high pressure treatment, and the process is short, with less reagent consumption, high recovery rate, low cost, and no waste gas and waste water, which is environmentally friendly.

Description

technical field [0001] The invention belongs to the technical field of non-ferrous metal metallurgy, and more particularly relates to a method for preparing gallium oxide by treating gallium nitride waste by acid method. Background technique [0002] With the continuous research and development of gallium nitride materials, the continuous development of optoelectronics and microelectronics industries, and the acceleration of the replacement of electronic technology products, more and more products containing gallium nitride materials have been (or will be) eliminated as Waste containing gallium nitride. Gallium nitride-containing wastes mainly come from: (1) large screens, car lights, traffic lights, etc.; (2) semiconductor lighting; (3) digital storage technology; (4) nitrogen used in military and civilian wireless communications GaN-based high-temperature, high-frequency, high-power microwave devices and GaN-based photodetectors for military use. If these gallium nitride...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00
CPCC01G15/00C01P2006/80
Inventor 赵卓徐亮熊延杭田勇攀张福元张楷何锦东徐猛猛
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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