Vacuum packaging self-compensation resonance pressure sensitive chip probe and packaging method thereof
A sensitive chip and vacuum packaging technology, which is applied in the measurement of fluid pressure, decorative arts, and measuring devices, can solve problems such as temperature drift, low Q value, measurement accuracy and long-term stability, and reduce the pressure change in the cavity , improve the accuracy, improve the effect of stability
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specific Embodiment approach 1
[0050] Specific implementation mode one: combine Figure 1 to Figure 8 Describe this embodiment, a vacuum-packaged self-compensating resonant pressure-sensitive chip probe of this embodiment includes a sealing cover plate 1, a silicon resonant pressure-sensitive chip 2, Kovar pins 3, electrode bonding wires 4, and a probe medium transmission channel 5 and the sealing tube base 6; the upper end surface of the sealing tube base 6 is the contact surface 601 of the sealing cover plate, and a three-stage stepped groove is set on the contact surface 601 of the sealing cover plate, and the middle stepped surface of the stepped groove is the lead wire hole surface 604 , the lower stepped surface is the chip bonding surface 602, the probe medium transmission channel 5 is opened on the chip bonding surface 602, and a plurality of lead holes 603 are vertically opened on the lead hole surface 604, and the sealed socket 6 There is an annular sealing groove 605 in the middle of the outer cy...
specific Embodiment approach 2
[0051] Specific implementation mode two: combination figure 2 Describe this embodiment mode. The silicon resonant pressure sensitive chip 2 of this embodiment mode includes a chip upper cover 201, a resonant layer 202, a pressure silicon-based substrate 2021-1, a temperature silicon-based substrate 2022-1, and a stress isolation layer 203. The cover 201, the resonant layer 202, the pressure silicon-based substrate 2021-1, the temperature silicon-based substrate 2022-1 and the stress isolation layer 203 are sequentially connected and integrated from top to bottom. The resonant layer 202 includes the pressure resonator 2021 and the temperature The resonator 2022, the pressure resonator 2021 and the temperature resonator 2022 are installed horizontally on the pressure silicon-based substrate 2021-1 and the temperature silicon-based substrate 2022-1 from right to left, and the lower end surface of the pressure silicon-based substrate 2021-1 An inverted trapezoidal pressure-sensin...
specific Embodiment approach 3
[0053] Specific implementation mode three: combination figure 2 To describe this embodiment, in this embodiment, a pressure-sensing through hole 2031 is opened directly under the pressure silicon-based substrate 2021-1, and a temperature-sensing through-hole 2032 is opened directly under the temperature silicon-based substrate 2022-1. Such setting facilitates the transmission of pressure to the silicon-based substrate 2021 and then to the resonant layer 202 to achieve the purpose of pressure sensing. Other compositions and connections are the same as those in Embodiment 1 or 2.
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