In order to make the objects, technical solutions, and advantages of the present invention, the technical solutions of the present invention will be described in conjunction with the specific embodiments and appended claims. Obviously, the described embodiments are merely embodiments of the invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art are in the range of the present invention without making creative labor.
 The following is exemplary, and is intended to be illustrative of the invention and is not to be construed as limiting the invention.
 like Figure 1 to 4 As shown, an embodiment of the present invention provides a method of processing a nano-imprint structure, including:
 Step A: Apply a layer of nano-embossed special glue surface on the surface of the substrate;
 Step B: Template of the target graphic size is used to nano-printing the nano-embossed special glue, so that the target graphics size is transferred to the substrate, obtain a graphics mask, and the surface of the substrate is not covered by the pattern mask. Apparent film;
 Step c: Remove the press film by dry etching process, and form a bare area of the surface of the substrate;
 Step D: Transfer the target graphic size to the substrate.
 Specifically, in the nano-embossed structure, the target pattern size of the target pattern size is formed into a graphic mask structure in the surface of the substrate, and the surface of the substrate is not covered by a pattern, nano pressure The dedicated glue is imprintted to form a press film;
 Remove the press film by dry etching process until the surface of the substrate is exposed to form a bare area; The processing process can be a pre-plating deposition, re-peeling a graphics mask, or directly etching;
 Thereby, the imprint bottom film can be completely removed before copying the target graphics, thereby avoiding the subsequent etching process, or affects the subsequent peeling process, thereby avoiding the difference between the target graphic copy or graphics dimension The problem, improve product quality, and improve productivity.
In the embodiment of the present invention, before the graphical size replication process, the nano-press film increases a step to the bottom film step, which can directly expose the surface of the substrate, and the embossing pattern does not distorted, which helps follow-up graphics size The transfer process is carried out, such as subsequent MAINETCH steps, normally performed after nano-imprinting, such, etc., thereby effectively enhances etching selection ratio and graphic replication.
 Further, step D specifically includes:
 Step D01: Coatting deposition of the bare area to form a dielectric film layer;
 Step D02: The graphic mask is removed by the stripping process, and the target pattern size mainly based on the dielectric film is obtained on the substrate.
 Further, in step d02, "removing the graphic mask by the peeling process" includes:
 The imprint mask is wet-removable by a strip process.
 like figure 2 As shown, in the actual process, the graphical size replication process can be used to deposit a pre-plating deposition, and the processing process of the graphics mask.
 That is, the coating deposition process film layer is carried out directly on the bare area of the substrate surface without the imprint glue, and then the stripped process is carried out.
 Specifically, after the film is removed, the substrate is bare, the desired medium layer coating can be achieved to the region of the unburden, so that the dielectric film layer can be bonded directly to the substrate, and finally by peeling process (LIFT- Off) The imprint mask is wet, thus obtaining a graphical size of the dielectric film layer on the substrate.
 Further, step D specifically includes:
 Step D11: The etching process is directly carried out directly to the bare area, and the target graphic size is obtained on the substrate.
 Further, in step D11, "etching the bare area directly" specifically includes:
 Dry etching processes in the exposed area of the surface of the substrate.
 Further, step D11 also includes:
 The etch rate of the press film is controlled.
 like image 3 As shown, in the actual process, the subsequent graphics size replication process can also be directly subjected to the MAINETCH (main etching) step, i.e., the substrate is etched, to achieve the purpose of graphics transfer.
 Specifically, after the end membrane removal process is performed, after the film is completely removed, the dry etching process system is established for the substrate to achieve a replication nano-imprint mask graphic or the desired graphic size.
 Thus, in the specific embodiment, the apparent film is used to increase the film thickness before the main etching substrate step is used for the main etching substrate step. This can directly expose the surface of the substrate, which helps the method of MAINETCH (main etching) steps, can effectively improve the etching choices and process time, which is better than the graphical transfer and morphology control. The results obtained.
 Further, in step c, "removing the press film through the dry etching process" includes:
 Step C1: In the ICP dry etching device, the press film is removed by plasma gas; wherein the plasma gases comprise O2 and / or AR.
 Further, in step C1, ICP dry etching the O 2 The gas flow range is 50 ~ 150scm, and the input AR gas flow range is 25 ~ 100sccm, O 2 / AR gas input flow ratio is 30 to 75%.
 In the actual process, the bottom membrane process is treated mainly by using O 2 The AR plasma removes the imprint bottom membrane.
 Take the Maxis 380ICP etching equipment as an example, ICP dry etching input O 2 The gas flow range is 50 ~ 150sccm, the Ar gas flow range is 25 ~ 100sccm, O 2 / AR gas input flow ratio is 30 to 75%.
 Further, step c further includes:
 Step C2: The etch rate of the press film is controlled.
 Further, step C2 specifically includes:
 The upper electrode power range of the ICP dry etching device is 150 ~ 1000W, the lower electrode power range is 50 ~ 300W, the internal pressure strong regulation range is 2.8mt ~ 7mT, the cooling temperature is adjusted to 5 ° C ~ 40 ° C, He air pressure The strong stressed control range is 3T to 8T to control the etching rate of the press film of 60 to 200 nm / min.
 Further, when the MAXIS 380ICP etching device is used, the concurrent surface etching rate ranges from 60 to 200 nm / min, and the specific parameters in the ICP dry etching apparatus are set as above, thereby controlling the etch rate and the anisotropy. Erochure to ensure the fidelity of the target graphic size.
 like Figure 4 As shown in the actual operation, the steps of dry etching process of the nano-embossed pattern are as follows:
 Step 1: A graphic mask is obtained by using nano-embossed methods;
 Step 2: Using the dry etching process method, the bottom film produced by the nano-imprint is carried out;
 Step 3: Specific can be involved in the process requirements of the two directions, one is to carry out the substrate to etch the process to achieve the purpose of graphical transfer, and the other direction is a coating deposition process directly in the exposed area without the cover. The membrane layer is then performed in the release process (LIFT-OFF).
 The nano-embossed structure mentioned in the steps is, by coating a layer of nano-embossed special glue on the surface of the substrate, the nano-pressing process is performed with the target pattern size, so that the target pattern is copied to the substrate. .
 Step 2, the decextovation process, mainly by using O 2 , Ar plasma is removed by the imprint bottom membrane,
 Take the Maxis 380ICP etching equipment as an example, ICP dry etching input O 2 The gas flow range is 50 ~ 150sccm, the Ar gas flow range is 25 ~ 100sccm, O 2/ The AR gas input flow ratio is 30 to 75%.
 ICP dry etching equipment is 150 ~ 1000W, the lower electrode power range is 50 ~ 300W, the internal pressure strong regulation range is 2.8mt ~ 7mt, the cooling temperature regulation ranges from 5 ° C to 40 ° C, He gas pressure The regulation range is 3T to 8T, and the bottom film etch rate ranges from 60 to 200 nm / min.
 The process mentioned in step three in step three, and after the implementation of the second membrane removal process,
 After the direction is removed, the substrate is established for the base material to achieve a replica of the nano-imprint mask graphic or the desired graphic size.
 In the other hand, after the surface of the substrate is exposed to the surface of the film, the desired medium layer coating can be realized to carry out the dielectric film layer to bind directly to the substrate, and finally by peeling processes (LIFT- Off) The imprint mask is wet, thus obtaining a graphical size of the dielectric film layer on the substrate.
 In summary, in accordance with the subsequent process of embossed process or stripping process or the like, the present invention is mainly reflected in the bottom of the nano-embedded structure using the dry etching method. The film is effectively removed until the substrate is exposed, and the imprint mask is well reserved, and the subsequent processes include, but not limited to: optimizing the effective implementation of the subsequent dry etching process, improve the etching choice ratio (ie etch substrate and The selection ratio of the imprint mask, the effective control of etching, and the graphic copy fidelity; or, the deposition layer is effectively attached to the surface of the substrate, solving the presence of the nano-compact film caused by the dielectric film layer The problem of failure of the stripped process (LIFT-OFF) caused by the substrate; thereby directly efficiently achieving replication or transfer of the target graphics size, ensuring the fidelity.
 It should be understood that although this specification describes in accordance with an embodiment, it is not to include only one independent technical solution. This narrative method of the specification is simply, and those skilled in the art will use the specification as a whole, each The technical solution in the embodiment can also be combined, and other embodiments which will be appreciated by those skilled in the art can also be combined.
 A series of detailed descriptions listed above is intended to be specifically described in terms of the feasibility embodiments of the present invention, and is not intended to limit the scope of the invention, and any equivalent embodiment or change in the spirit of the spirit of the present invention. All should be included within the scope of the invention.