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Luminescent material, QLED device, manufacturing method of QLED device and display device

A technology of luminescent materials and devices, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., and can solve problems such as display devices that need to be improved

Pending Publication Date: 2021-12-03
BEIJING BOE TECH DEV CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, the current luminescent materials, QLED devices and manufacturing methods, and display devices still need to be improved.

Method used

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  • Luminescent material, QLED device, manufacturing method of QLED device and display device
  • Luminescent material, QLED device, manufacturing method of QLED device and display device
  • Luminescent material, QLED device, manufacturing method of QLED device and display device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0042] Specifically, refer to Figure 4 , the preparation method of the QLED device comprises the following steps:

[0043] S100: Provide substrate

[0044] According to some embodiments of the present invention, the substrate is provided in this step, and the type of the substrate is not particularly limited. For example, the substrate can be made of conductive glass. Specifically, the conductive glass can be pre-treated before use. The pre-treatment includes: sequentially using different Ultrasonic cleaning of conductive glass with propanol, water, and acetone, and then UV treatment. The treatment time can be 5-10 minutes, which can effectively remove oil-soluble or water-soluble impurities remaining on the surface of conductive glass.

[0045] S200: forming an anode on one side of the substrate

[0046] According to some embodiments of the present invention, an anode is formed on one surface of the substrate in this step, and the material for forming the anode is not part...

experiment example 1

[0072] 1. Provide the substrate. The substrate is made of conductive glass. The conductive glass is ultrasonically cleaned with isopropanol, water, and acetone before use, and treated with UV for 10 minutes.

[0073] 2. An anode is formed on one side of the substrate by vacuum evaporation, and the material for forming the anode is ITO.

[0074] 3. A hole injection layer is formed on the side of the anode away from the substrate. The material for forming the hole injection layer is PEDOT:PSS4083. The hole injection layer is prepared by a spin coating process, and the speed of the homogenizer is set to 1500 rpm. Among them, the PEDOT The film forming temperature was 140°C.

[0075] 4. A hole transport layer is formed on the side of the hole injection layer away from the anode. The material forming the hole transport layer is styrene with a concentration of 15 mg / ml. The hole transport layer is prepared by a spin coating process, and the speed of the homogenizer is It can be 200...

experiment example 2

[0087] Experimental example 2 is generally consistent with experimental example 1, the difference is that

[0088] The structural formula of the material forming the hole transport layer is as formula (3)

[0089]

[0090] The nanorods of the light-emitting material forming the light-emitting layer are CdSe, and the structural formula of the cross-linked ligand is as formula (4),

[0091]

[0092] Formula (4), where R 1 The group is carboxyl, R 2 The group is undecyl, R 3 The group is an epoxy group.

[0093] The light treatment uses g-line.

[0094] The results show that under the irradiation of g-line, the epoxy group and amino group of the nanorod ligand molecules are broken under the irradiation of g-line, and then cross-linking occurs. The reaction equation is as formula (5),

[0095]

[0096] After cross-linking, the nanorods and the hole transport layer are linked by chemical bonds, which greatly improves the hole transport efficiency between the hole tran...

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Abstract

The invention provides a light-emitting material, a QLED device, a manufacturing method and a display device. The light-emitting material comprises nanorods and cross-linking ligands, the structural formula of the cross-linking ligands is R1-R2-R3, the nanorods are connected with R1 groups of the cross-linking ligands through coordinate bonds, and therefore a light-emitting layer, formed by the nanorods, of the QLED device can be cross-linked with a material forming a hole transport layer by R3 ligand on the nanorods, so that the hole transport speed in the device is increased, and the luminescent property of the device is improved.

Description

technical field [0001] The present invention relates to the display field, in particular, to a luminescent material, a QLED device, a manufacturing method, and a display device. Background technique [0002] In the QLED device in the related art, carrier imbalance tends to occur in the light-emitting layer, which leads to a decrease in the light-emitting efficiency and deterioration of the light-emitting effect of the light-emitting layer. The polarized emission properties of nanorods have been the subject of both experimental and theoretical attention since the methods for preparing nanorods have gradually matured. The electron transport properties, chemical properties, and optical properties of nanorods are affected by their length and material symmetry. The unique optical properties presented by nanorods, including low laser threshold, linearly polarized absorption and emission, etc., can be used in the field of polarization as bright and stable polarized light sources, ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/06C09K11/56C09K11/88H01L51/54H01L51/50
CPCC09K11/565C09K11/06C09K11/025C09K11/883C09K2211/188H10K50/115H10K85/6572H10K50/15
Inventor 王好伟
Owner BEIJING BOE TECH DEV CO LTD
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