Cold source MOS transistor and manufacturing method thereof

Abstract

The invention relates to a cold source MOS transistor and a manufacturing method thereof. The cold source MOS transistor comprises a P-type or N-type doped substrate, a grid electrode is arranged on the substrate, the grid electrode and the substrate are isolated through a grid dielectric layer, a source electrode and a drain electrode are arranged on the substrate and located on the two sides of the grid electrode respectively, a PN junction is formed on the interface of the source electrode and a P-type or N-type doped area on the substrate, the upper surface of the PN junction is covered with a metal contact layer, and the metal contact layer is isolated from the grid electrode through a first side wall. According to the invention, the sub-threshold swing of the transistor can be reduced, the switching current ratio is improved, and the integrated level is higher.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a cold source MOS transistor and a manufacturing method. Background technique [0002] MOS transistors are a semiconductor device based on metal-oxide-semiconductor (Metal-Oxide-Semiconductor), which can be divided into P-type MOS transistors and N-type MOS transistors. An integrated circuit composed of MOS transistors is called a MOS integrated circuit, and a complementary MOS integrated circuit composed of a PMOS transistor and an NMOS transistor is called a CMOS-IC. The difference between PMOS transistors and NMOS transistors is that the substrate and source / drain doping types are reversed. [0003] In the prior art, MOS transistors basically adopt the following processes and structures, taking NMOS transistors as an example, including: [0004] On the P-type doped silicon substrate, make two N-doped regions, and use metal to lead out two electrodes, which are respectively used...

AI Technical Summary

Problems solved by technology

[0005] In the MOS tube with the above structure, the part of the off-state source carrier higher than the channel barrier will form leakage, and its distribution is limited by the Boltzmann distribution and cannot be completely turned off at room temperature, so the subthreshold region swings Unable to break through 60mV / dec, the switching current ratio is limited

Images