Data processing method and device, electronic equipment and storage medium

Abstract

The embodiment of the invention discloses a data processing method and device, electronic equipment and a storage medium, and the method comprises the steps: determining a to-be-written physical block address matched with a data request identifier from a pre-established data storage lookup table according to the data request identifier in a received data writing request; if data is written into a physical block to be written corresponding to the to-be-written physical block address, determining target data, and determining a target physical block for storing the target data from a pre-established idle lookup table; writing the target data into the target physical block, and updating the data storage lookup table and the idle lookup table according to the to-be-written physical address and the target physical address of the target physical block, so as to determine the physical block for storing the target data according to the updated data storage lookup table and idle lookup table after a data writing request is received. Through the technical scheme of the embodiment of the invention, the technical effects of saving the storage memory and improving the physical block management efficiency are realized.

Description

technical field [0001] The embodiments of the present invention relate to the field of computer technology, and in particular, to a data processing method, device, electronic equipment, and storage medium. Background technique [0002] NandFlash greatly reduces the cost per bit of flash memory by reducing the process size and adopting multi-level technology. [0003] But NandFlash also brings other problems at the same time, mainly manifested in the degradation of device performance, such as the decrease of access speed, the increase of bit error rate, the decrease of durability and the deterioration of retention characteristics. Wherein, endurance refers to the maximum programming and erasing times (P / E Cycles) that a memory cell can withstand. The reason why there is a maximum number of times of erasing and writing is that the programming and erasing operations of flash memory are carried out through the electron tunneling mechanism, and a large number of tunneling will c...

AI Technical Summary

Problems solved by technology

[0005] At present, the management of physical blocks of NandFlash is mostly realized through multiple tables. Each table not only stores physical block information, but also stores other related information. When the storage capacity of physical blocks increases, not only the number of tables increases, but also the The related content of storage has also increased, such as error checking and correction (Error Correcting Code, ECC), etc., which occupy a large amount of memory resources. For example, managing 1MBytes of NandFlash requires 4KBytes of memory. At this time, there will be relatively small control over memory device, unable to effectively manage NandFlash, that is, there is a technical problem that it is inconvenient to manage physical blocks

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