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Positive pressure insensitive interdigital capacitive strain sensor and preparation method thereof

A technology of strain sensor and interdigital capacitance, applied in the field of strain sensor, can solve the problems of inability to apply large tensile strain, capacitive strain sensor cannot distinguish between tensile force and positive pressure, etc., and achieves good sensitivity, low durability, and low hysteresis. Effect

Pending Publication Date: 2021-12-10
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] In order to solve the problem that the existing capacitive strain sensor cannot distinguish tension and normal pressure and cannot be applied to large tensile strain, the present invention provides a positive pressure insensitive interdigitated capacitive strain sensor and its preparation method

Method used

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  • Positive pressure insensitive interdigital capacitive strain sensor and preparation method thereof
  • Positive pressure insensitive interdigital capacitive strain sensor and preparation method thereof
  • Positive pressure insensitive interdigital capacitive strain sensor and preparation method thereof

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Embodiment Construction

[0074] A positive pressure insensitive interdigitated capacitive strain sensor, comprising a flexible upper substrate 1 and a flexible lower substrate 2; the lower surface of the flexible upper substrate 1 is provided with an interdigitated microfluidic channel 3, and the interdigitated microfluidic channel 3 A filling hole 4 penetrating up and down is provided between the two terminals of the channel 3 and the upper surface of the flexible upper substrate 1; the lower surface of the flexible upper substrate 1 and the upper surface of the flexible lower substrate 2 are glued together; The liquid metal interdigitated electrode 5 is filled in the microfluidic channel 3; the openings of the two filling holes 4 are sealed with an adhesive 6.

[0075] Both the flexible upper substrate 1 and the flexible lower substrate 2 are in the shape of a rectangle, the thickness of both is less than 1 mm, and both are made of PDMS; the diameters of the two filling holes 4 are both 1 mm; the thi...

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Abstract

The invention relates to a strain sensor, in particular to a positive pressure insensitive interdigital capacitive strain sensor and a preparation method thereof. The problems that an existing capacitive strain sensor cannot distinguish tensile force and positive pressure and cannot be applied to large tensile strain are solved. The positive pressure insensitive interdigital capacitive strain sensor comprises a flexible upper substrate and a flexible lower substrate. An interdigital micro-fluidic channel is formed in the lower surface of the flexible upper substrate, and a vertically through filling hole is formed between each of two terminals of the interdigital micro-fluidic channel and the upper surface of the flexible upper substrate; the lower surface of the flexible upper substrate and the upper surface of the flexible lower substrate are bonded together; the interdigital microfluidic channel is filled with a liquid metal interdigital electrode; and the openings of the two filling holes are blocked by adhesives. The sensor is suitable for the fields of human-computer interfaces, soft robots, electronic skins and the like.

Description

technical field [0001] The invention relates to a strain sensor, in particular to a positive pressure insensitive interdigitated capacitive strain sensor and a preparation method thereof. Background technique [0002] Strain sensors made of soft and stretchable materials have attracted great interest in the fields of human-machine interface, soft robotics, electronic skin, etc. These strain sensors can help monitor the motion of soft robots or convert human motion into electrical signals. [0003] There are three main sensing mechanisms of strain sensors: capacitive sensing, piezoresistive sensing, and piezoelectric sensing. Among these sensing mechanisms, capacitive sensing is superior to other sensing mechanisms due to its low temperature coefficient, low power consumption, and low hysteresis behavior. But for parallel plate capacitors, by It can be known that whether it is tension or positive pressure, the capacitance will change, and there is a crosstalk problem betwe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01B7/16
CPCG01L1/14G01L1/148G01B7/22
Inventor 张东光王志民张杰杨嘉怡吴亚丽
Owner TAIYUAN UNIV OF TECH
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