Semiconductor device, method of forming the same and one-time-programmable memory device

Abstract

The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device according to the present disclosure includes a gate structure, a source / drain part, dielectric layers, a gate contact, and source / drain contacts. The source / drain part is adjacent to the gate structure. The dielectric layers are disposed over the gate structure and the source / drain features. The gate contact is disposed in the dielectric layer and on the gate structure. The source / drain contact are arranged between in the dielectric layers and on the source / drain part. The dielectric layer is doped with a dopant, and the dopant includes germanium or tin.

Description

technical field [0001] The present disclosure relates to a semiconductor device, a method of manufacturing the same, and a one-time programmable memory device. Background technique [0002] Among semiconductor memory devices, non-volatile memory (Non-Volatile Memory, NVM) devices can be used to store data even when the memory device is turned off. In various examples, the nonvolatile memory device may include: read only memory (Read Only Memory, ROM), magnetic memory, optical memory, or flash memory, which may exist in different types of nonvolatile memory device. Non-volatile memory devices include: memory devices that can be programmed many times (Multi-Time Programmable, MTP), memory devices that can only be programmed several times (Few-Time Programmable, FTP), and memory devices that can only be programmed once (One-Time Programmable, OTP) memory device. As its name implies, OTP NVM devices can only be successfully programmed once, but MTP NVM devices can be successf...

AI Technical Summary

Problems solved by technology

However, traditional OTP NVM devices are usually only suitable for their original design purpose, and cannot meet all aspects

Images