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Film-forming composition

A technology of composition and compound, which is applied in the direction of photosensitive materials, instruments, and optomechanical equipment used in optomechanical equipment, can solve the problems such as difficult to obtain resist pattern film thickness, achieve high transferability, suppress collapse, The effect of good adhesion

Pending Publication Date: 2022-01-07
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed. Functional process of mask during substrate processing

Method used

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  • Film-forming composition
  • Film-forming composition
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0352] Hereinafter, the present invention will be described more specifically with reference to synthesis examples and examples, but the present invention is not limited to the following.

[0353] [1] Synthesis of hydrolysis condensate B

Synthetic example 1-1

[0355] Add 21.2g of tetraethoxysilane, 6.47g of methyltriethoxysilane, 1.86g of dicycloheptenyltriethoxysilane, and 44.3g of acetone into a 300ml flask, while stirring the mixed solution with an electromagnetic stirrer While stirring, 26.2 g of a 0.01 M nitric acid aqueous solution was added dropwise.

[0356] After the dropwise addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, ethanol and water which were reaction by-products were distilled off under reduced pressure, and concentrated to obtain an aqueous solution of a hydrolysis-condensation product (polymer).

[0357] Further, propylene glycol monomethyl ether acetate was added, and the concentration was adjusted so that the solvent ratio of 100% of propylene glycol monomethyl ether acetate became 20% by mass in terms of solid residue at 140°C.

[0358] The weight average molecular weight of th...

Synthetic example 1-2

[0360] Add 25.2g of tetraethoxysilane, 7.71g of methyltriethoxysilane, 2.48g of [4-(1-ethoxyethoxy)phenyl]trimethoxysilane, and 53.1g of acetone into a 300ml flask 11.5 g of 0.01 M nitric acid aqueous solution was added dropwise, stirring the mixed solution with a magnetic stirrer.

[0361] After the dropwise addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, methanol, ethanol, and water which were reaction by-products were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) aqueous solution.

[0362] Further, propylene glycol monomethyl ether acetate was added, and the concentration was adjusted so that the solvent ratio of 100% of propylene glycol monomethyl ether acetate became 20% by mass in terms of solid residue at 140°C.

[0363] The weight average molecular weight of the obtained poly...

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Abstract

The issue of the invention is to provide a film-forming composition that is suitable as a resist underlayer film-forming composition from which a resist underlayer film having both good adhesion to an EUV resist and good etching processability can be formed. This film-forming composition includes: a hydrolytic condensate (A) of a hydrolyzable silane compound produced in the presence of a basic hydrolysis catalyst; a hydrolysis condensate (B) of the hydrolyzable silane compound produced in the presence of an acidic hydrolysis catalyst; and a solvent.

Description

technical field [0001] The present invention relates to a film-forming composition. Background technique [0002] In the field of manufacturing semiconductor devices, a technique of forming a fine pattern on a substrate, etching according to the pattern, and processing the substrate is widely used. [0003] Micropatterning has progressed with the development of photolithography technology, and exposure techniques using KrF excimer laser and ArF excimer laser, electron beams, and EUV (Extreme Ultra Violet: extreme ultraviolet) have been studied. [0004] In microfabrication using photolithography using photoresists, a thin film of photoresist is formed on a semiconductor substrate such as a silicon wafer, and ultraviolet rays are irradiated thereon through a mask pattern in which a pattern of a semiconductor device is drawn. Wait for active light to develop, and use the obtained resist pattern as a protective film to etch the substrate to form fine unevenness corresponding t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/04C09D5/00C08L83/04C09D183/06C09D183/08G03F7/11C09D7/63
CPCC09D5/00C09D7/63C09D183/06C09D183/08G03F7/0752G03F7/0757C08G77/14C08G77/26G03F7/11G03F7/2004C08L83/04C08L83/06C08G77/08C08G77/18C08G2150/00
Inventor 柴山亘武田谕志垣修平石桥谦加藤宏大中岛诚
Owner NISSAN CHEM IND LTD