A kind of semiconductor device and its manufacturing method

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, and the semiconductor device at least includes: a substrate, including a plurality of well regions of different types arranged side by side, and each of the well regions includes one or more Source region; a plurality of semiconductor elements disposed on the active region, and the plurality of semiconductor elements include a driving transistor and a transfer transistor, wherein the width of the active region where the transfer transistor is located is smaller than that of the active region where the driving transistor is located Region width; the first metal layer is disposed on the semiconductor element and is electrically connected to the semiconductor element; the second metal layer is disposed on the first metal layer and is electrically connected to the first metal layer The word line layer is arranged on the second metal layer and is electrically connected with the second metal layer. The performance of the semiconductor device can be improved through the semiconductor device and its manufacturing method provided by the invention.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Static Random-Access Memory (SRAM) is used for high-speed buffering and stores data through transistors, and the static memory generally includes a driving transistor, a load transistor and a transmission transistor. Currently, the most common SRAM cell is the 6T structure. [0003] The key indicator of the stability of the SRAM cell of the 6T structure is static noise redundancy or static noise margin (SNM, Static Noise Margin), which is usually defined as the operating current of the drive transistor and the operating current of the pass transistor In the preparation process of SRAM, the value of static noise tolerance fluctuates greatly, and the mismatch of SRAM cells is prone to increase, resulting in read and write failures and low yields. Yield is unstable. Contents of the in...

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Problems solved by technology

[0003] The key indicator of the stability of the SRAM cell of the 6T structure is static noise redundancy or static noise margin (SNM, Static Noise Margin), which is usually defined as the operating current of the drive transistor and the operating current of the pass transistor In the preparation process of SRAM, the static noise tolerance value fluctuates greatly, and the mismatch of SRAM cells is prone to increase, resulting in read and write failures and low yields. Unstable yield

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