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Light-emitting element and preparation method thereof

A technology for light-emitting components and substrates, applied in electrical components, laser welding equipment, manufacturing tools, etc., can solve the problems of being easily pulled by external forces, abnormal edge collapse of flip-chip light-emitting diodes, affecting the reliability of flip-chip light-emitting diodes, etc. Bonding force, improved cutting yield, improved focusing effect

Pending Publication Date: 2022-01-11
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For traditional flip-chip light-emitting diodes, the epitaxial structure is bonded to the substrate through the bonding layer. In order to improve the light extraction efficiency and reliability, a protective layer is deposited on the upper surface, side walls and bonding layer of the epitaxial structure. Because The crystal orientation of the bonding layer and the protective layer is different from that of the substrate. During the stealth dicing process, the substrate will be cut and separated first, so that the bonding layer or protective layer is easily pulled by external forces during the stealth dicing process, resulting in flip-chip luminescence Diodes are prone to edge chipping anomalies, which in turn affect the reliability of flip-chip LEDs
The above anomalies are especially noticeable for small-sized flip-chip LEDs

Method used

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  • Light-emitting element and preparation method thereof
  • Light-emitting element and preparation method thereof
  • Light-emitting element and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0075] see figure 1 , the light-emitting element includes a substrate 400 and a bonding layer 300 formed on the substrate 400, the epitaxial structure 200 is disposed on the upper surface of the bonding layer 300, and the area above the bonding layer 300 without the epitaxial structure 200 forms a dicing line. During the formation of the scribe line, the etching medium will etch the bonding layer 300 , so that the upper surface of the bonding layer 300 at the area where the scribe line is located is lower than the upper surface of the bonding layer 300 at the area where the epitaxial structure 200 is located. The protective layer 500 covers the epitaxial structure 200 and the scribe lines. The first trench 600 is located inside the scribe line and extends downward from the upper surface of the passivation layer 500 to the inside of the substrate 400 .

[0076] The light-emitting element has a cutting line A extending along the height direction of the substrate 400. The projec...

Embodiment 2

[0094] see Figure 4 ~ Figure 7 , the light-emitting element includes a substrate 400 and a bonding layer 300 formed on the substrate 400, the epitaxial structure 200 is disposed on the upper surface of the bonding layer 300, and the area above the bonding layer 300 without the epitaxial structure 200 forms a dicing line. During the formation of the scribe line, the etching medium will etch the bonding layer 300 , so that the upper surface of the bonding layer 300 at the area where the scribe line is located is lower than the upper surface of the bonding layer 300 at the area where the epitaxial structure 200 is located. The protective layer 500 covers the epitaxial structure 200 and the scribe lines. The first trench 600 is located inside the scribe line and extends downward from the upper surface of the protection layer 500 to the upper surface of the bonding layer 300 or the upper surface of the substrate 400 .

[0095] The light-emitting element has a cutting line A exten...

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Abstract

The invention discloses a light-emitting element and a preparation method thereof. The light-emitting element comprises a substrate and a bonding layer formed on the substrate; an epitaxial structure is arranged on the bonding layer; a cutting channel is formed in a region, without the epitaxial structure, above the bonding layer; a protective layer covers the epitaxial structure and the cutting channel, and a first channel is located in the cutting channel and extends downwards from the upper surface of the protective layer to the interior of the substrate. According to the invention, the first channel is formed in the cutting channel, and the first channel extends downwards from the upper surface of the protection layer to the interior of the substrate, so that no continuous protection layer and bonding layer at the cutting line A can be ensured before invisible cutting, and the abnormal phenomenon of edge breakage of the light-emitting element due to the fact that the bonding layer or the protection layer is pulled by external force is avoided; and the cutting yield is improved.

Description

technical field [0001] The present application relates to the technical field related to semiconductors, in particular to a light-emitting element and a preparation method thereof. Background technique [0002] Due to the characteristics of high luminous efficiency, energy saving, environmental protection and long life, flip-chip light-emitting diodes are widely used in various fields. The mainstream cutting method of flip-chip light-emitting diodes is stealth cutting, that is, lasers of a certain wavelength are used to act on a certain depth inside the substrate of flip-chip light-emitting diodes to form intermittent tiny "explosion points", and then combined with the splitting process, for the purpose of cutting. [0003] For traditional flip-chip light-emitting diodes, the epitaxial structure is bonded to the substrate through the bonding layer. In order to improve the light extraction efficiency and reliability, a protective layer is deposited on the upper surface, side...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/44H01L33/00B23K26/402
CPCH01L33/20H01L33/44H01L33/005B23K26/402H01L2933/0025
Inventor 吴志伟王燕云熊伟平丘建生郭桓邵彭钰仁王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS
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