Method for improving surface structure defect of groove and preparation method of semiconductor structure

Abstract

The invention provides a method for improving surface structure defects of a groove and a preparation method of a semiconductor structure. The method for improving the surface structure defect of the groove comprises the following steps that after the groove is formed in a substrate, the groove of the substrate is washed through cleaning liquid, and the cleaning liquid is water. According to the invention, the water is used as the cleaning solution to wash the groove of the substrate, so the granular defect of the surface structure of the groove such as a word line structure can be effectively improved, the etching of the tungsten of the word line structure in the subsequent process can be optimized, and the structure of the word line structure is not influenced at all.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation technology, in particular to a method for improving surface structural defects of grooves and a method for preparing a semiconductor structure. Background technique [0002] In the existing semiconductor manufacturing process technology, such as the trench of the word line structure (Word Line, WL), the residual by-products are removed by ashing (ASH) after etching, which will cause some oxide particles to adhere On the surface of the word line trenches, large granular defects will form after tungsten deposition (WDEP) if they cannot be removed. [0003] When the above-mentioned large granular defects are formed, and these large particles are just above the grooves such as the word line structure, in the subsequent tungsten etching process, these large particles will block the etching of the channel and cause the word line tungsten The phenomenon of insufficient etching (WL WUnd...

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Problems solved by technology

[0002] In the existing semiconductor manufacturing process technology, such as the trench of the word line structure (Word Line, WL), the residual by-products are removed by ashing (ASH) after etching, which will cause some oxide particles to adhere On the surface of the word line trench, if it cannot be removed, large granular defects will form after tungsten deposition (WDEP)

[0003] When the above-mentioned large granular defects are formed, and these large particles are just above the grooves such as the word line structure, in the subsequent tungsten etching process, these large particles will block the etching of the channel and cause the word line tungsten The phenomenon of insufficient etching (WL WUnder-ETCH) causes bit line coupling and word line short circuit (BLC-WL short), which will cause cross fail during the final reliability test, resulting in low yield Rate (low yield)

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