Method for de-bonding SiC sheet on silicon substrate
A silicon substrate and debonding technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as 8-inch/12-inch process incompatibility
Pending Publication Date: 2022-01-18
浙江同芯祺科技有限公司
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Problems solved by technology
[0003] Compound semiconductors can exhibit excellent performance on ultra-high voltage (>8000V) IGBT and ultra-high frequency (>300KHz) MOSFET components, but the current mass production technology of crystal growth materials can only limit the substrate size to 6 inches and 6 inches The following are incompatible with the current main 8-inch / 12-inch process of silicon wafers
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[0033] In order to further explain the technical means and functions adopted by the present invention to achieve the intended purpose, the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.
[0034] Such as Figure 1 to Figure 5 As shown, the method for debonding SiC sheets on a silicon substrate according to an embodiment of the present invention includes:
[0035] S100: Turn over the silicon substrate bonded with multiple SiC sheets, so that the SiC sheets face the graphite tray and embed the graphite tray.
[0036] S200: Spray an etchant on the silicon substrate to debond the SiC sheets from the silicon substrate.
[0037] S300 : removing the debonded silicon substrate, and leaving multiple pieces of SiC on the graphite tray.
[0038] According to the method for debonding the SiC sheet on the silicon substrate according to the embodiment of the present invention, by aligning and embedding the SiC sh...
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Abstract
The invention provides a method for de-bonding a SiC sheet on a silicon substrate. The method comprises the steps: S100, turning over a silicon substrate bonded with a plurality of SiC sheets, so that the SiC sheets face a graphite tray and are embedded into the graphite tray; S200, spraying an etching solution to the silicon substrate, so that the plurality of SiC sheets are de-bonded with the silicon substrate; and S300, removing the silicon substrate after de-bonding, and keeping the plurality of pieces of SiC in the graphite tray. According to the method for de-bonding the SiC sheet on the silicon substrate provided by the invention, the SiC sheets are aligned and embedded into the graphite tray, and the high-temperature resistance of the graphite tray is utilized, so that the subsequent processes such as high-temperature annealing and the like on the SiC sheet are facilitated; and de-bonding is carried out through an etching solution in a chemical etching manner, so that the surface damage to the SiC sheet is avoided, and the yield of a SiC device is favorably improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for debonding SiC sheets on a silicon substrate. Background technique [0002] Semiconductor materials can be divided into elemental semiconductors and compound semiconductors. The former are semiconductors formed by silicon (Si), germanium (Ge), etc., and the latter are gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide ( SiC) and other compounds are formed. Semiconductors have mainly experienced three generations of changes in the past. Gallium arsenide (GaAs), gallium nitride (GaN) and silicon carbide (SiC) semiconductors are the representatives of the second and third generation semiconductors respectively. The performance and high temperature performance are much better, and the manufacturing cost is higher. It can be described as an upstart in semiconductors. [0003] Compound semiconductors can exhibit excellent performance on ultra-high volt...
Claims
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Login to View More IPC IPC(8): H01L21/78H01L21/673
CPCH01L21/7806H01L21/7813H01L21/673
Inventor 严立巍符德荣李景贤
Owner 浙江同芯祺科技有限公司