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Low capacitance TVS diode

A diode and low-capacitance technology, which is applied in the field of TVS semiconductor devices, can solve problems such as loss of function, device damage, and reduced ability of devices to withstand electrostatic breakdown, so as to reduce the installation area and improve reliability.

Pending Publication Date: 2022-01-25
苏州达晶半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The damage of static electricity to electronic components is divided into sudden damage and potential damage. Sudden damage refers to partial damage of the device and loss of function. Potential damage refers to partial damage of the device without loss of function, and cannot be found in the production process test. , but it will make the product unstable during use, good and bad, thus posing greater harm to product quality
As the integration of components becomes higher and higher, the increase in integration means that the ability of devices to withstand electrostatic breakdown is reduced

Method used

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  • Low capacitance TVS diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: a kind of low-capacitance TVS diode, comprises diode chip 1, first lead bar 2 and second lead bar 3, and this first lead bar 2 and second lead bar 3 are all formed by vertical welding part 4, horizontal lead bar The foot portion 5 is composed of an inclined connection portion 6 between the vertical welding portion 4 and the horizontal lead portion 5. The vertical welding portion 4 and the horizontal lead portion 5 are vertically arranged, and the inclined connection portion 6 is connected to the horizontal lead portion. The included angle of the feet 5 is 30-60°;

[0018] The respective vertical welding parts 4 and oblique connection parts 6 of the diode chip 1, the first lead bar 2 and the second lead bar 3 are located in the epoxy package 7, and the first lead bar 2 and the second lead bar 3 The respective horizontal pin portions 5 are located at the bottom of the epoxy package 7, the diode chip 1 is vertically arranged between the respective vertical so...

Embodiment 2

[0022] Embodiment 2: a kind of low-capacitance TVS diode, comprises diode chip 1, first lead bar 2 and second lead bar 3, and this first lead bar 2 and second lead bar 3 are all formed by vertical welding part 4, horizontal lead bar The foot portion 5 is composed of an inclined connection portion 6 between the vertical welding portion 4 and the horizontal lead portion 5. The vertical welding portion 4 and the horizontal lead portion 5 are vertically arranged, and the inclined connection portion 6 is connected to the horizontal lead portion. The included angle of the feet 5 is 30-60°;

[0023] The respective vertical welding parts 4 and oblique connection parts 6 of the diode chip 1, the first lead bar 2 and the second lead bar 3 are located in the epoxy package 7, and the first lead bar 2 and the second lead bar 3 The respective horizontal pin portions 5 are located at the bottom of the epoxy package 7, the diode chip 1 is vertically arranged between the respective vertical so...

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PUM

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Abstract

The invention discloses a low-capacitance TVS diode which comprises a diode chip, a first lead strip and a second lead strip, a vertical welding part and a horizontal pin part are vertically arranged, and the included angle between an inclined connecting part and the horizontal pin part is 30-60 degrees; the vertical welding parts and the inclined connecting parts of the diode chip, the first lead strip and the second lead strip are located in the epoxy packaging body, and the horizontal pin parts of the first lead strip and the second lead strip are located at the bottom of the epoxy packaging body; the diode chip is vertically arranged between the vertical welding parts of the first lead strip and the second lead strip; and at least one through hole is formed in the inclined connecting part of each of the first lead strip and the second lead strip. According to the low-capacitance TVS diode, water vapor is effectively prevented from entering a device along the horizontal pin part, so that the reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a TVS semiconductor device. Background technique [0002] The damage of static electricity to electronic components is divided into sudden damage and potential damage. Sudden damage refers to partial damage of the device and loss of function. Potential damage refers to partial damage of the device without loss of function, and cannot be found in the production process test. , but in use, the product will become unstable, good and bad, thus posing greater harm to product quality. As the integration of components becomes higher and higher, the improvement of integration means that the ability of devices to withstand electrostatic breakdown is reduced. How to design a small transient voltage suppression diode has become the direction of efforts of those skilled in the art. Contents of the invention [0003] The purpose of the present invention is to provide a low-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49H01L23/31
CPCH01L23/49H01L23/3107H01L2224/32245H01L2224/33181H01L2924/181H01L2924/00012
Inventor 廖兵田伟
Owner 苏州达晶半导体有限公司