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A heavy metal/ferromagnetic/heavy metal heterojunction realizing field-free switching and its preparation method

A heavy metal, heterojunction technology, applied in metal material coating process, manufacturing/processing of electromagnetic devices, components of electromagnetic equipment, etc., to achieve the effects of low cost, convenient preparation and simple structure

Active Publication Date: 2022-06-14
ZHEJIANG LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a heavy metal / ferromagnetic / heavy metal heterojunction and its preparation method that realizes field-free reversal, which solves the problem of uniaxial Magnetic anisotropy, exchange bias field, interlayer exchange coupling, gradient spin flow and other conditions to achieve ferromagnetic / heavy metal heterogeneous magnetic moment field-free reversal have relatively complex preparation processes and relatively poor device stability.

Method used

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  • A heavy metal/ferromagnetic/heavy metal heterojunction realizing field-free switching and its preparation method
  • A heavy metal/ferromagnetic/heavy metal heterojunction realizing field-free switching and its preparation method
  • A heavy metal/ferromagnetic/heavy metal heterojunction realizing field-free switching and its preparation method

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Embodiment

[0028] (2) Si / SiO with a length of 95 mm and a width of 10 mm 2 Put the long substrate into the circular tray, the substrate is symmetrical about the center of the tray, and then put the tray into the sample transfer chamber;

[0029] (3) Close the magnetron sputtering chamber and the sample transfer chamber, and the baffle valve between the two chambers is also closed, and the sputtering chamber and the sample transfer chamber are respectively evacuated;

[0030] (4) When the background vacuum of the magnetron sputtering chamber is better than 1.0×10 -5 Pa, enter the argon gas with a purity of 99.99% into the magnetron sputtering chamber, adjust the flow rate of the argon gas so that the pressure of the argon gas is 0.45 Pa, start the sputtering switch of the Pt target position and the Co target position, and the sputtering switch of the Pt target position The sputtering power was 40 W, and the pre-sputtering was 2 min. The sputtering power of the Co target was 50 W, and th...

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Abstract

The invention discloses a heavy metal / ferromagnetism / heavy metal heterojunction realizing field-free flipping and a preparation method thereof, comprising a substrate, a bottom heavy metal layer on the substrate, and a ferromagnetic layer on the bottom heavy metal layer , the top heavy metal layer located on the ferromagnetic layer, the top heavy metal layer has a wedge-shaped structure; the preparation method includes the following steps: S1: under the conditions of background vacuum and high-purity argon, using heavy metals as targets, using super Depositing heavy metals on the substrate by high vacuum magnetron sputtering technology to obtain a bottom heavy metal layer; using ferromagnetic metals as targets, using ultra-high vacuum magnetron sputtering technology to deposit ferromagnetism on the bottom heavy metal layer to obtain a ferromagnetic layer; The heavy metal is used as the target material, and the heavy metal is deposited on the ferromagnetic layer by using ultra-high vacuum magnetron sputtering technology to obtain the top heavy metal layer. The invention can realize electromagnetism reversal without external magnetic field, and obtain the structure required for field-free reversal by regulating the thickness of the wedge-shaped top heavy metal layer.

Description

technical field [0001] The invention relates to the technical field of magnetic and electronic devices, in particular to the invention of a heavy metal / ferromagnetic / heavy metal heterojunction capable of realizing field-free flipping and a preparation method thereof. Background technique [0002] The spin-orbit moment effect of ferromagnetic / heavy metal heterojunctions has been paid close attention to since its discovery. The horizontal injection of current into the ferromagnetic / heavy metal heterojunction can induce the spin-orbit moment of the ferromagnetic layer to flip the magnetic moment, and the whole process has the characteristics of high speed, high efficiency and low energy consumption. Therefore, the spin-orbit moment has broad application prospects in spintronics, and can be applied to the design of spin-torque oscillators, race track memories, and spin-orbit moment-magnetic random access memories, etc. [0003] However, for most ferromagnetic / heavy metal hetero...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/35H01L43/06H01L43/04H01L43/14
CPCC23C14/165C23C14/185C23C14/352H10N52/80H10N52/00H10N52/01
Inventor 陈焕坚
Owner ZHEJIANG LAB
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