Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of STI structure

A technology of hard mask layer and oxide layer, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low product reliability and yield, reduce grinding rate, improve morphology, and improve reliability and yield effect

Pending Publication Date: 2022-02-11
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a method for preparing an STI structure, which can solve the problem of low product reliability and yield caused by dish-shaped defects after CMP planarization in the preparation method of the STI structure provided in the related art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of STI structure
  • Preparation method of STI structure
  • Preparation method of STI structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0028] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of an STI structure, and the method comprises the steps: forming an O3 type oxide layer on a hard mask layer, wherein the hard mask layer is formed on a first oxide layer, and the first oxide layer is formed on a substrate; forming grooves in the O3 type oxide layer, the hard mask layer and the substrate; forming a second oxide layer, wherein the second oxide layer covers the surface of the groove; forming a third oxide layer, wherein the third oxide layer fills the groove; and performing planarization through a CMP process, so that the hard mask layer outside the groove is exposed. In the preparation process of the STI structure, the O3 type oxide layer is formed on the hard mask layer, and the O3 type oxide layer is used as a buffer layer, so that the grinding rate of the subsequent CMP process can be reduced, the morphology after the CMP process can be improved, the dishing defect is reduced, and the reliability and yield of the product are improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a shallow trench isolation (shallow trench isolation, STI) structure. Background technique [0002] As an insulating structure between active areas (AA) of semiconductor devices, the STI structure is widely used in the semiconductor manufacturing industry (especially in the process with a process node of 40 / 28 nanometers and below). [0003] In the related art, the preparation method of the STI structure includes: sequentially forming a pad oxide layer and a hard mask layer on the substrate; forming a trench in the substrate through a photolithography process; depositing an oxide layer so that the oxide layer fills the trench; Planarization is performed through a chemical mechanical polishing (CMP) process to remove the oxide layer outside the trench. [0004] However, after being planarized by the CMP process, there will be a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/762
CPCH01L21/76224
Inventor 贡祎琪
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD