Phase change random access memory cell and forming method thereof
A technology of phase-change memory and phase-change layer, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., to achieve the effects of increasing resistance, reducing thermal conductivity, and reducing heat dissipation rate
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[0032] As mentioned in the background art, the performance of the phase-change memory cell in the prior art still needs to be further improved.
[0033] The inventors have found that W or TiN is generally used as the bottom contact electrode material of the existing phase change memory cell, but the filling ability of TiN is poor, while the filling ability of W is high, but the bottom contact electrode formed by W and the phase change layer The quality of the contact between them is poor, which affects the performance of the phase change memory cell.
[0034] The inventors have further studied and found that the reason for affecting the contact quality between the bottom contact electrode and the phase change layer is that, in the process of forming the planarization of the bottom contact electrode, the abrasive liquid used generally includes a mixed solution of ammonia water and hydrogen peroxide. In a negative atmosphere, W is easily oxidized to form tungsten oxide, and the ...
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