Phase change random access memory cell and forming method thereof

A technology of phase-change memory and phase-change layer, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., to achieve the effects of increasing resistance, reducing thermal conductivity, and reducing heat dissipation rate

Inactive Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The performance of existing phase-change memory cells needs to be further improved

Method used

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  • Phase change random access memory cell and forming method thereof
  • Phase change random access memory cell and forming method thereof
  • Phase change random access memory cell and forming method thereof

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Embodiment Construction

[0032] As mentioned in the background art, the performance of the phase-change memory cell in the prior art still needs to be further improved.

[0033] The inventors have found that W or TiN is generally used as the bottom contact electrode material of the existing phase change memory cell, but the filling ability of TiN is poor, while the filling ability of W is high, but the bottom contact electrode formed by W and the phase change layer The quality of the contact between them is poor, which affects the performance of the phase change memory cell.

[0034] The inventors have further studied and found that the reason for affecting the contact quality between the bottom contact electrode and the phase change layer is that, in the process of forming the planarization of the bottom contact electrode, the abrasive liquid used generally includes a mixed solution of ammonia water and hydrogen peroxide. In a negative atmosphere, W is easily oxidized to form tungsten oxide, and the ...

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Abstract

A phase change random access memory cell and a forming method thereof are provided. The forming method of the phase change random access memory cell comprises the following steps: providing a substrate; forming a dielectric layer on the surface of the substrate; forming a through hole penetrating through the dielectric layer; forming an adhesive layer on the surface of the inner wall of the through hole; forming a metal layer filling the through hole on the surface of the adhesive layer, wherein the metal layer is doped with nonmetal doping ions; and forming a phase change layer on the surfaces of the dielectric layer, the adhesive layer and the metal layer. By adopting the method, the performance of the formed phase change random access memory cell can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory unit and a forming method thereof. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is established based on the idea that phase change thin films can be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. Become the focus of current non-volatile memory technology research. [0003] In phase-change memory, the storage value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric current. When the phas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10N70/8413H10N70/231H10N70/8828H10N70/011H10N70/826
Inventor 李志超伏广才
Owner SEMICON MFG INT (SHANGHAI) CORP
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