Light-emitting chip, manufacturing method thereof and display panel

Abstract

The invention relates to a light-emitting chip, and the light-emitting chip comprises a first electrode layer, a hole injection layer, a light-emitting layer, an electron injection layer and a second electrode layer which are stacked in sequence; a first resistance region is arranged in the hole injection layer, the first resistance region surrounds the edge of the hole injection layer, the first resistance region has a first resistance value, and the first resistance value is higher than the resistance value of the hole injection layer; a second resistance area is arranged in the electron injection layer, the second resistance area is also arranged around the edge of the electron injection layer, the second resistance area has a second resistance value, and the second resistance value is also higher than the resistance value of the electron injection layer. According to the light-emitting chip, the area proportion of the side wall of the light-emitting chip can be reduced, meanwhile, non-radiative recombination at the side wall of the light-emitting chip can be reduced, and then the light-emitting efficiency of the light-emitting chip can be improved. The invention further relates to a manufacturing method of the light-emitting chip and a display panel comprising the light-emitting chip or the light-emitting chip manufactured by the method.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a light-emitting chip, a method for manufacturing the light-emitting chip, and a display panel including the light-emitting chip or the light-emitting chip manufactured by the method. Background technique [0002] Light-emitting chips emit light through radiative recombination that releases energy with photon radiation. Since the energy bands at the surface of the sidewall are prone to bending, non-radiative recombination formed by non-photon radiation occurs at the sidewall of the light-emitting chip. That is, the sidewall of the light-emitting chip is the receiving side where holes and electrons injected into the light-emitting chip undergo non-radiative recombination. At present, with the reduction of the size of the Micro LED, the area ratio of the sidewall of the light-emitting chip increases, and the non-radiative recombination rate of holes and electrons on the s...

AI Technical Summary

Problems solved by technology

At present, with the reduction of the size of the Micro LED, the area ratio of the sidewall of the light-emitting chip increases, and the non-radiative recombination rate of holes and electrons on the sidewall of the light-emitting chip increases accordingly. Excessive non-radiative recombination will affect the light-emitting chip. luminous efficiency

Images