Defect detection method, memory and manufacturing method thereof

Abstract

The invention provides a defect detection method, a memory and a manufacturing method of the memory. The defect detection method comprises the following steps: providing a semiconductor substrate with a stacking structure on the surface, wherein the semiconductor substrate has a first doping type, a channel through hole penetrating to the semiconductor substrate is formed in the stacking structure, and a semiconductor layer is formed at the bottom of the channel through hole; doping the semiconductor layer to enable the semiconductor layer to have a second doping type, and enabling the semiconductor layer to be in contact with the semiconductor substrate to form a PN junction; and testing the electrical property of the PN junction to characterize defects in the semiconductor layer. According to the method, the quality of the semiconductor layer in selective epitaxial growth can be detected in the technical process of the memory, so that the device performance and the product yield are improved.

Description

technical field [0001] The present invention relates to the technical field of memory, and in particular, to a defect detection method, a memory and a manufacturing method thereof. Background technique [0002] In the process of making NAND memory in the prior art, the semiconductor layer is usually selectively epitaxially grown (SEG) at the bottom of the channel through hole, and then the storage structure is formed on the semiconductor layer in the channel through hole. Whether the above semiconductor layer The presence of defects plays a crucial role in memory cells. The fewer defects in the semiconductor layer, the better the effect of suppressing leakage current; its carrier mobility determines the turn-off speed of the bottom select transistor (Bottom Select Gate, BSG); in addition, the semiconductor layer with fewer defects can also effectively support The upper storage structure. [0003] However, at present, only the structure of the semiconductor layer itself can...

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a defect detection method, a memory and a manufacturing method thereof, so as to solve the problem that in the prior art, it is impossible to detect the quality of the semiconductor layer grown by selective epitaxial growth in the process of the memory, thereby affecting device performance and product quality. rate problem

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