Method for removing moisture by using supercritical fluid and moisture removal cavity
A supercritical fluid and moisture technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting wafer cleaning efficiency and production quality, wafer quality impact, pattern drawing structure collapse, etc.
Pending Publication Date: 2022-02-18
上海至临半导体技术有限公司
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Problems solved by technology
[0002] With the continuous advancement of wafer manufacturing technology, the size of the patterned structure presented by the related nano-scale microstructure is gradually shrinking, especially the process node has been advanced from 28nm to below 4nm, so in the process of manufacturing , any residue of pollution will have an undue impact on the quality of the wafer. Generally, various cleaning, etching, wet methods and other processes are used to clean the surface of the wafer. However, in the cleaning process, the surface of the wafer is often Some water molecules left on the surface, etc., in the process of removing the water molecules, it is easy to cause the pattern drawing structure on the surface of the wafer to collapse due to tension problems, which greatly affects the cleaning of the wafer efficiency and production quality
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[0045] Such as Figure 1 to Figure 5 As shown, a moisture removal chamber of a preferred embodiment is shown, which is suitable for the above-mentioned method for removing moisture by supercritical fluid, including: a chamber body 1, a connecting pipe and a carrying platform 7, and the connecting pipe and the The cavity 1 is connected, and the connecting pipe is used to feed isopropanol and supercritical fluid. The carrier 7 is arranged in the cavity 1 , and the wafer 2 is supported on the carrier 7 .
[0046] In a further embodiment of the present invention, the carrying table 7 is used to slightly rotate the wafer 2 in the step S30. Further, the aforementioned slight rotation refers to a certain rotation of the wafer 2 along its central axis as the rotation axis.
[0047] In a further embodiment of the present invention, the rotation of the wafer 2 by the stage 7 can be classified into mechanical or pneumatic.
[0048] In a further embodiment of the present invention, when...
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The invention discloses a method for removing moisture by using a supercritical fluid and a moisture removal cavity. The method for removing moisture by using the supercritical fluid comprises the following steps: step S10, the surface of a wafer is cleaned; S20, the surface of the wafer is covered with isopropyl alcohol; and S30, the surface of the wafer is covered with supercritical fluid, wherein in the step S30, a water layer, an isopropanol layer and a supercritical fluid layer are sequentially formed on the surface of the wafer from inside to outside. According to the application of the invention, the wet process and the drying process of the wafer are combined, so that static elimination is realized when the wafer is cleaned by the chemical liquid medicine and the ultrapure water in sequence, water is removed on the surface of the wafer through the isopropanol and the supercritical fluid carbon dioxide, and finally the water is taken away along with the isopropanol through the supercritical fluid. The protection of the patterned structure on the surface of the wafer is realized.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing water by using a supercritical fluid and a water removal chamber. Background technique [0002] With the continuous advancement of wafer manufacturing technology, the size of the patterned structure presented by the related nano-scale microstructure is gradually shrinking, especially the process node has been advanced from 28nm to below 4nm, so in the process of manufacturing , any residue of pollution will have an undue impact on the quality of the wafer. Generally, various cleaning, etching, wet methods and other processes are used to clean the surface of the wafer. However, in the cleaning process, the surface of the wafer is often Some water molecules left on the surface, etc., in the process of removing the water molecules, it is easy to cause the pattern drawing structure on the surface of the wafer to collapse due to tension proble...
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Login to View More IPC IPC(8): H01L21/02H01L21/683H01L21/67
CPCH01L21/67051H01L21/6838H01L21/02052
Inventor 陈新来
Owner 上海至临半导体技术有限公司