Floating gate memory and preparation method thereof

Abstract

The invention discloses a floating gate memory. The floating gate memory comprises a substrate, an insulating dielectric layer, a buffer layer, a channel layer, a tunneling layer, a source electrode, a drain electrode, a floating gate layer, a barrier layer, a gate electrode and a gate electrode contact material layer, wherein the buffer layer covers one surface of the insulating dielectric layer back to the substrate, the channel layer covers one surface of the buffer layer back to the insulating dielectric layer, the tunneling layer covers the part of the surface, back to the buffer layer, of the channel layer, the floating gate layer covers a surface, back to the channel layer, of the tunneling layer, the barrier layer covers a surface, back to the tunneling layer, of the floating gate layer, and the gate electrode covers a surface, back to the floating gate layer, of the barrier layer. According to the floating gate memory, the advantage of no dangling bond of a two-dimensional material can be utilized, the interface defect is reduced, the threshold voltage of the floating gate memory is reduced, and power consumption of the floating gate memory is further reduced. The invention also provides a preparation method of the floating gate loss memory.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a floating gate memory and a preparation method thereof. Background technique [0002] The storage time and service life of the floating gate memory are long, but its operating voltage is high during the erasing and writing process, resulting in a large power consumption of the floating gate memory. There are a large number of interface dangling bonds on the surface of the silicon body of the traditional floating gate memory. As a result, the performance of the floating gate memory is severely degraded, the reliability of the floating gate memory is reduced, and the further development of the floating gate memory is limited. [0003] Therefore, it is necessary to develop a novel floating gate memory and its preparation method to solve the above-mentioned problems in the prior art. Contents of the invention [0004] The object of the present invention is to provide a floating ga...

AI Technical Summary

Problems solved by technology

[0002] The storage time and service life of the floating gate memory are long, but its operating voltage is high during the erasing and writing process, resulting in a large power consumption of the floating gate memory. There are a large number of interface dangling bonds on the surface of the silicon body of the traditional floating gate memory. As a result, the performance of the floating gate memory is seriously degraded, the reliability of the floating gate memory is reduced, and the further development of the floating gate memory is limited.

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