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41results about How to "Avoid Interface Defects" patented technology

Bismuth ferrite base film layer stacked structure capacitor and preparation method thereof

The invention discloses a bismuth ferrite base film layer stacked structure capacitor and a preparation method thereof, wherein the capacitor comprises a bottom electrode, a substrate, a buffer layer, a ferroelectric film layer and a metal point electrode in sequence from the bottom to top; the buffer layer is a manganese-doped barium strontium titanate film, the chemical formula is Ba0.6Sr0.4Ti(1-x)MnxO3, x is the mole equivalent of element manganese, and x is equal to 0.005-0.05; and the ferroelectric film layer is a bismuth ferrite base film, the chemical formula is Bi(1-y)LnyFeO3, wherein Ln is one of lanthanide, y is the mole equivalent of lanthanide, and y is equal to 0.01-0.2. The preparation method is simple, and the obtained capacitor is a storage cell of a ferro-electric field effect transistor; and the capacitor overcomes the defects that the bismuth ferrite base film capacitor on ordinary silicon substrate has the defects of poor interface performance and high working voltage, and has good energy storage performance.
Owner:UNIV OF JINAN

High-covering black UV silkscreen printing ink

The invention discloses a high-covering black UV silkscreen printing ink. A preparation method for the high-covering black UV silkscreen printing ink comprises the following steps: preheating acrylate and then mixing the preheated acrylate with a part of active monomer; then adding a dispersant and carrying out primary dispersion; then successively adding pigment and a filling material and carrying out secondary dispersion; carrying out grinding to obtain color paste; mixing a phosphine oxide photoinitiator with residual active monomer; and adding the color paste, an organosilicon antifoaming agent and an organosilicon leveling agent and carrying out uniform dispersion so as to obtain the high-covering black UV silkscreen printing ink. The high-covering black UV silkscreen printing ink provided by the invention is reasonable in composition; all the components are in good compatibility; and the prepared printing ink has excellent comprehensive properties and good storage performance, and the viscosity of the printing ink is suitable for silkscreen printing. The printing ink does not need increase in the usage amounts of components like carbon black, prevents unfavorable influence of the components on the appearance and light shading performance of a product, and can meet light shading requirements of the product after only one printing and under the condition of a thickness of 7 to 8 micrometers, so unexpected technical effects are obtained.
Owner:SUZHOU BETELY POLYMER MATERIALS CO LTD

Display panel and preparation method therefor

The invention discloses a display panel and a preparation method therefor. The display panel comprises subpixels, and each subpixel comprises a drive transistor which comprises a gate medium layer. Each subpixel also comprises a storage capacitor which comprises a capacitor medium layer; a first insulating layer which is disposed between a data line of the display panel and a scanning line of a display panel; and a second insulating layer which is disposed between the data line and a common line of the display panel. The gate medium layer, the first insulating layer, the capacitor medium layer and the second insulating layer are integrated through a halftone mask or the gray scale masking technology to form insulating films with different thicknesses. The thickness of the gate medium layer is less than the thickness of the first insulating layer. The technical scheme of the invention improves the performance of the display panel.
Owner:HKC CORP LTD

Deposition method of silicon oxide thin film and preparation method of low temperature polycrystalline silicon TFT substrate

The invention provides a deposition method of a silicon oxide thin film and a preparation method of a low temperature polycrystalline silicon TFT substrate. According to the deposition method of the silicon oxide thin film, ultraviolet light is introduced as auxiliary energy for a silicon oxide deposition reaction, oxygen is decomposed into free oxygen through the ultraviolet light, the ultraviolet light reacts with organosilane gas to generate silicon oxide, thereby the silicon oxide is deposited in an environment without plasmas for forming the silicon oxide thin film, interface defects and surface damage caused due to the fact that the surface of the silicon oxide thin film is impacted by the high energy plasmas are avoided, and film forming quality of the silicon oxide thin film is improved. According to the preparation method of the low temperature polycrystalline silicon TFT substrate, the silicon oxide thin film in a gate electrode insulating layer is fabricated through the method that the organosilane gas reacts with the oxygen to generate the silicon oxide in the environment with ultraviolet irradiation, surface defects and interface damage caused by plasmas to the surface of the silicon oxide thin film in the current plasma reinforced chemical vapor deposition method are avoided, thereby film forming quality of the silicon oxide thin film is improved, and the electrical property of a TFT is enhanced.
Owner:CHANGSHA HKC OPTOELECTRONICS CO LTD

Preparation method and application of gradient hydrogel soft drive

ActiveCN110551297AControl of temperature-sensitive bending propertiesAvoid Interface DefectsChemistryElectric field
The invention relates to the technical field of composite materials and polymer functional materials, in particular to a preparation method and application of a gradient hydrogel soft drive. The preparation method of the gradient hydrogel soft drive comprises the steps that a certain amount of negatively-charged ascidian cellulose nanocrystals, N-isopropenyl acrylamide, an auxiliary and water areevenly mixed at the certain temperature, and thus a mixed solution is obtained; and the mixed solution is induced through a direct current electric field, and then in-situ thermal-initiation polymerization is conducted to prepare the gradient hydrogel soft drive. The gradient hydrogel soft drive is prepared from the ascidian cellulose nanocrystals and the poly N-isopropenyl acrylamide in a compounded mode; the negatively-charged ascidian cellulose nanocrystals are subjected to electric field force and thus move to form the gradient concentration, and finally, in-situ initiation polymerizationis conducted to form the hydrogel soft drive of a gradient cross-linking structure; and the hydrogel soft drive has the controllable temperature-sensitive bending rate and fatigue resistance.
Owner:WUHAN UNIV

Mixed matrix membrane, preparation method and application thereof

The invention discloses a mixed matrix membrane, a preparation method and application thereof, and belongs to the fields of material science and gas separation. The mixed matrix membrane comprises a high-molecular polymer and a porous metal-organic cage complex ZRT-1-4F, wherein the content of the porous metal-organic cage complex ZRT-1-4F in the mixed matrix membrane is 1-12 wt%. According to the invention, the porous metal-organic cage complex ZRT-1-4F filled in the mixed matrix membrane is different from a traditional inorganic filling material, wherein the separation performance of the membrane is better along with the increase of the filling amount of the traditional inorganic filling material in the mixed matrix membrane, and the porous metal-organic cage complex ZRT-1-4F prepared by the method has the best separation performance when the filling amount is low (3.2 wt%), and then the separation performance of the membrane is reduced along with the increase of the filling amount of the porous metal-organic cage complex ZRT-1-4F.
Owner:BEIJING UNIV OF TECH

Method for enlarging size and quantity of monocrystal diamond seed crystals

The invention relates to a method for enlarging the size and quantity of monocrystal diamond seed crystals, and solves the problem of high difficulty of a large-size diamond monocrystal preparation technology. According to the invention, monocrystal diamond with an orientation of (100) is used as a seed crystal; firstly, growing monocrystal diamond into a square shape through primary deposition; then performing cutting into two isosceles triangular cylinders along a diagonal line, polishing a cutting surface to serve as a growth surface for secondary deposition, enabling the diamond to grow along the direction vertical to the cutting surface, then performing cutting again along the diagonal line and the bottom of the newly grown square so as to form two large isosceles triangular cylindersand an original small isosceles triangular cylinder, polishing the cutting surfaces of the obtained large isosceles triangular cylinders to serve as growth surfaces for third deposition growth, and finally performing cutting along the vertical direction of the cutting surface to obtain a plurality of diamond seed crystals with the orientation of (100) and the size enlarged by multiple times. Themethod is easy to operate, and the size and the number of the monocrystal diamond can be rapidly increased at the same time.
Owner:山西国脉金晶碳基半导体材料产业研究院有限公司

Method for simultaneously enlarging size and quantity of monocrystal diamond seed crystals

The invention relates to a method for simultaneously enlarging the size and the quantity of monocrystal diamond seed crystals. The method comprises the following steps: firstly, allowing monocrystalline diamond with a size of a*a*b to grow to a height h along the b direction by adopting a chemical vapor deposition (CVD) method; cutting the monocrystal diamond along the diagonal line of an a*h surface to form two triangular cylindrical monocrystal diamonds; carrying out homogeneous epitaxial growth of the diamonds with the cutting surfaces of the triangular cylindrical monocrystal diamonds as growth surfaces; and when a growth height reaches h1, cutting each monocrystal diamond into four sections along a connecting line between a bottom vertex and the left and right points of the top and aparallel growth direction passing through the bottom vertex to obtain two obtuse-triangle cylindrical monocrystal diamond seed crystals and two right-triangle cylindrical monocrystal diamond seed crystals. The method is simple to operate, can quickly change small-size monocrystal diamond seed crystals into large-size monocrystal diamond seed crystals, increases the sizes and the numbers of the monocrystal diamonds and effectively avoids interface defects and polycrystals introduced by a splicing method.
Owner:山西国脉金晶碳基半导体材料产业研究院有限公司

LED light emitting material

The invention discloses an LED light emitting material, belongs to the technical field of semiconductor photoelectron materials and devices and solves the technical problem that LED light emitting materials are low in light emitting efficiency in the prior art. The LED light emitting material comprises a P(I)N junction and a hole injection layer, the hole injection layer closely contacts with a p-type layer of the P(I)N junction, carrier concentration of the hole injection layer is larger than hole concentration in the p-type layer, and thickness of the hole injection layer is 50nm-3micron. The LED light emitting material is of a homogeneous structure, so that interface defect caused by heterostructure is avoided; hole concentration of the p-type layer is increased by adopting the hole injection layer, so that the LED light emitting material has high light emitting efficiency.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Light-driven shape-programmable MXene composite hydrogel driver and preparation method thereof

ActiveCN113045716AControl of temperature-sensitive bending propertiesAvoid Interface DefectsEngineeringBiological organism
The invention discloses a light-driven shape-programmable MXene composite hydrogel driver and a preparation method thereof. The light-driven shape-programmable MXene composite hydrogel driver is formed by copolymerization of a polymerizable MXene nano monomer and thermosensitive PNIPAM hydrogel in-situ free radicals. The distribution of MXene and the anisotropy of a hydrogel network can be controlled by utilizing a low electric field, so that various biologically excited programmable anisotropic hydrogel drivers are developed by controlling an ITO electrode pattern, a direct-current electric field direction and mask-assisted ultraviolet polymerization. The invention provides a new development insight of a programmable and reconfigurable intelligent driver, and the intelligent driver can have application prospects in various fields.
Owner:TIANJIN UNIV

Transistors and methods of manufacturing the same

Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.
Owner:SAMSUNG ELECTRONICS CO LTD

Packaging process of power electronic transformer based on 3D photocuring printing

The invention provides a packaging process of a power electronic transformer based on 3D photocuring printing, and relates to the technical field of transformer packaging. The process comprises the following steps: printing a skeleton network, pouring, applying voltage, applying ultrasonic waves, electrifying, thermally curing and polishing. An epoxy resin printing framework network is adopted to position and fix an iron core and a winding at the first stage of packaging, the winding is effectively prevented from loosening or deforming in the packaging process, epoxy resin containing filler is adopted as a pouring body, the thermal resistance and the expansion coefficient can be remarkably reduced, the heat dissipation performance is improved, and the cracking risk is reduced; the epoxy resin is easy to electrowet a solid in a high-voltage electric field; ultrasonic waves have the characteristic of improving the infiltration capacity, and the infiltration effect of filler-containing resin and a framework network is further improved; the winding is electrified, so that the winding is firstly heated, the casting body is solidified from inside to outside, and external resin is allowed to perform automatic feeding on the shrinkage cavity, so that the internal defects of packaging are remarkably reduced, and the reliability of packaging is improved.
Owner:HEFEI UNIV OF TECH

Preparation method of GaAs-based horizontal plasma pin diode for multi-layer holographic antenna

The invention relates to a preparation method of a GaAs-based horizontal plasma pin diode for a multi-layer holographic antenna. The multi-layer holographic antenna comprises a semiconductor substrate GeOI, an antenna module, a first holographic round ring and a second holographic round ring, wherein the antenna module, the first holographic round ring and the second holographic round ring all comprises GaAs-based plasma pin diodes which are sequentially connected in series. The preparation method of the GaAs-based plasma pin diode comprises the steps of selecting a GeOI substrate in a certain crystal direction, depositing a GaAs layer on a surface of the substrate and forming an isolation region by metal-organic chemical vapor deposition (MOCVD); etching the substrate to form a P-type groove and an N-type groove and form a first P-type active region and a first N-type active region; and filling the P-type groove and N-type groove, forming a lead on the substrate to complete the preparation of the GaAs-based plasma pin diode. According to the embodiment, the high-performance GaAs-based plasma pin diode can be prepared and provided for forming the multi-layer holographic antenna by a deep groove isolation technology and an ion injection process.
Owner:潘芊璇

Environment-friendly flame-retardant mortar and preparation method and application thereof

The invention discloses an environment-friendly flame-retardant mortar, which is composed of 200-400 parts by mass of ordinary ash, 300-900 parts by mass of fine sand, 10-50 parts by mass of rubber powder, 1-5 parts by mass of wood fiber, 1-5 parts by mass of cellulose ether, 20-60 parts by mass of fireproof powder, 2-5 parts by mass of talc powder and 300-860 parts by mass of water. The above components are mixed and stirred evenly during preparation, the environment-friendly flame-retardant mortar evenly coats a heat-insulation board when used, the environment-friendly flame-retardant mortaris not only effective in flame retardance and convenient in construction, but also can effectively combine with a plastering mortar to avoid interface defects.
Owner:成都乐沸科技有限责任公司

Method for producing a composite material, and composite material

ActiveUS20190321870A1Expand the scope of expressionSmall widthDomestic articlesMetal working apparatusBand shapeElectroplating
A method for producing a composite material by plating a band arrangement with a top side (O) and a bottom side (U), wherein the band arrangement comprises at least a first strip and a second strip, which form between them a filling channel, wherein the band arrangement comprises at least one filler strip, wherein the abovementioned band arrangement is plated, wherein a part of the filler strip, during the plating, is extruded into the filling channel; and a composite material, characterized in that it has been produced according to the method as disclosed.
Owner:WICKEDER WESTFALENSTAHL

Plane millstone filling system with self-sharpening function

The invention discloses a plane millstone filling system with a self-sharpening function. The plane millstone filling system is prepared from the following raw materials: epoxy resin, a curing agent, microcrystal fused alumina, chromium sesquioxide and absolute ethyl alcohol. An inorganic abrasive material in a filled layer has a micro-crushing function and can be automatically crushed during passivation in the milling process to generate a novel milling cutting edge, so that the self-sharpening performance of the filled layer is improved. When the plane millstone filling system is used for filling a gap of a plane millstone, the preparation process is simple, no special recruitments for raw materials are required, the leveling property is good during filling, and a filler can be in favorable contact with an abrasive block; the filled plane millstone is favorable in heat radiating capability, strength and rigidity, capable of favorably solving the problem of scrap and workpiece burning in the existing milling process, prolonging the finishing intervals and further increasing the milling efficiency and suitable for industrial production and application.
Owner:SUZHOU SAILI PRECISION TOOLS

A method for enlarging the size and quantity of single crystal diamond seeds

The invention is a method for enlarging the size and quantity of single crystal diamond seed crystals, which solves the problem of high technical difficulty in preparing large-size diamond single crystals. The present invention adopts the single crystal diamond with the orientation of (100) as the seed crystal, first grows the single crystal diamond into a square shape through one deposition, then cuts it into two isosceles triangular prisms along the diagonal, and polishes the cut surface as the growth surface Carry out secondary deposition to make the diamond grow along the direction of the vertical cutting plane, and then cut again along the diagonal and bottom of the newly grown square to form two large isosceles triangular prisms and an original small isosceles triangular prism. After the cutting surface of the waist triangular prism is polished, it is used as the growth surface for three times of deposition and growth, and finally cut along the vertical direction of the cutting surface to obtain multiple diamond seed crystals with an orientation of (100) and multiple times in size. The method of the invention is simple to operate, and can rapidly increase the size and quantity of single crystal diamonds at the same time.
Owner:山西国脉金晶碳基半导体材料产业研究院有限公司

Floating gate memory and preparation method thereof

The invention discloses a floating gate memory. The floating gate memory comprises a substrate, an insulating dielectric layer, a buffer layer, a channel layer, a tunneling layer, a source electrode, a drain electrode, a floating gate layer, a barrier layer, a gate electrode and a gate electrode contact material layer, wherein the buffer layer covers one surface of the insulating dielectric layer back to the substrate, the channel layer covers one surface of the buffer layer back to the insulating dielectric layer, the tunneling layer covers the part of the surface, back to the buffer layer, of the channel layer, the floating gate layer covers a surface, back to the channel layer, of the tunneling layer, the barrier layer covers a surface, back to the tunneling layer, of the floating gate layer, and the gate electrode covers a surface, back to the floating gate layer, of the barrier layer. According to the floating gate memory, the advantage of no dangling bond of a two-dimensional material can be utilized, the interface defect is reduced, the threshold voltage of the floating gate memory is reduced, and power consumption of the floating gate memory is further reduced. The invention also provides a preparation method of the floating gate loss memory.
Owner:SHANGHAI INTEGRATED CIRCUIT MFG INNOVATION CENT CO LTD

A kind of preparation method of layered titanium-aluminum composite plate

ActiveCN104209697BGuaranteed interface bonding strengthAvoid Interface DefectsPetrochemicalComposite plate
The invention discloses a method for manufacturing a laminated titanium-aluminum composite board, and belongs to the technical field of laminated composite material manufacturing and machining. According to the method, firstly, the surface of a combined titanium or titanium alloy board is coated with a layer of aluminum or aluminum alloy through solid-liquid fusion covering, then compositing between an aluminum or aluminum ally board and the coated board is achieved through thermal diffusion or hot-rolling-bonding to obtain a laminated titanium-aluminum composite board blank, and finally a finished product of the laminated titanium-aluminum composite board is obtained through cold rolling deformation. Compared with an explosion and roll cladding method, cost and process difficulty of the method are greatly reduced, and production efficiency is greatly improved; compared with a traditional solid-liquid compositing method, the titanium-aluminum composite board manufactured through the method is good in performance, the thickness of the aluminum layer is large, and materials are saved; the manufactured titanium-aluminum composite board has the advantages of good heat conductivity of aluminum, high temperature resistance of titanium and the like, and can be widely used in the fields of aerospace, petrochemical engineering, ship manufacturing, power electronics and the like.
Owner:有研金属复材技术有限公司

GaAs-based solid-state plasma PiN diode and preparation method therefor

The invention relates to a GaAs-based solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and depositing a GaAs layer and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer GaAs of the substrate; performing ion injection in the P type trench and the N type trench to form a first P type active region and a first N type active region; filling the P type trench and the N type trench, and adopting ion injection to form a second P type active region and a second N type active region in the top layer GaAs of the substrate; and forming leads on the substrate to complete the preparation of the GaAs-based solid-state plasma PiN diode. According to the embodiments, the high-performance GaAs-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared by adopting a deep trench isolation technology and the ion injection process.
Owner:XIDIAN UNIV

Continuous gradient composite scaffold and preparation method thereof

The invention discloses a continuous gradient composite scaffold, and relates to the field of biomedical materials. The composite scaffold consists of hydrogel and magnetic composite nano particles; the weight percentages of the magnetic composite nano particles at the top and the bottom of the continuous gradient composite scaffold are respectively 0 percent and 10 to 70 percent; the weight percentage of the magnetic composite nano particles is gradually increased from the top of the continuous gradient composite scaffold to the bottom to form continuous gradient distribution; the hydrogel is hydrogel of polyvinyl alcohol and natural polysaccharide; and the magnetic composite nano particles are magnetic composite nano particles of an oxide of nano hydroxyapatite / iron. The continuous gradient composite scaffold improves cell compatibility by adding natural polysaccharide, has high strength and high biocompatibility, and can well meet the multilevel requirement of an osteochondral natural structure. The invention also discloses a preparation method for the continuous gradient composite scaffold. The preparation method is easy to implement and control, and has a broad application prospect.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Mismatch-free II-type superlattice structure based on antimony shutter switch and preparation method

The invention discloses a mismatch-free II-type superlattice structure based on an antimony shutter switch and a preparation method. The single-cycle structure comprises a three-layer structure of a GaSb layer, an InAs layer and an InAsSb interface layer. The preparation method comprises the steps of in the growth process of the II-type superlattice periodic structure, directly growing the InAs layer after GaSb growth, opening an Sb shutter after InAs growth, and enabling Sb and As in the InAs layer to be subjected to element replacement so as to form the InAsSb interface layer. The method ischaracterized in that the direct growth of the InSb interface layer is cancelled; the InAsSb interface layer is formed only by introducing Sb infiltration after InAs growth, so that the requirement ofstress compensation is met, and the difficulty of an interface preparation process is simplified. In addition, the defect of an island-mounted structure introduced during direct growth of a large-mismatch InSb interface is avoided, and the material performance is improved.
Owner:中科爱毕赛思(常州)光电科技有限公司

Heterojunction tunneling field-effect transistor and its preparation method

An embodiment of the present application provides a heterojunction tunneling field effect transistor and a manufacturing method thereof, comprising: a first insulating layer covering the upper surface of the substrate, and a first heterojunction material layer covering the upper surface of the first insulating layer One end of the source is arranged on the top, the source is arranged on one end of the first heterojunction material layer, a second insulating layer is arranged around the other end of the first heterojunction material layer, and the isolation layer is arranged on the heterojunction layer, The isolation layer covers the inner side of the source electrode; the second heterojunction material layer covers the other end of the first heterojunction material layer, the second insulating layer, and the second insulating layer, forming a heterojunction with the first heterojunction material layer. material junction, the drain is arranged on the other end of the second heterojunction layer opposite to the source; the gate dielectric layer covers the position between the source and the drain on the second heterojunction material layer, and the gate is arranged on on the gate dielectric layer. By setting the second insulating layer for isolation, the leakage current caused by the edge state is significantly reduced, and a heterojunction is formed by using two-dimensional materials, which avoids interface defects caused by lattice mismatch.
Owner:HUAWEI TECH CO LTD

A kind of mixed matrix membrane and its preparation method and application

The invention discloses a mixed matrix membrane and a preparation method and application thereof, belonging to the fields of material science and gas separation. The mixed matrix membrane includes high molecular polymer and porous metal-organic cage complex ZRT-1-4F. The content of the porous metal-organic cage complex ZRT-1-4F in the mixed matrix membrane is 1-12 wt%. The porous metal-organic cage complex ZRT-1-4F filled in the mixed matrix membrane of the present invention is different from the traditional inorganic filling material. The traditional inorganic filling material is that with the increase of the filling amount in the mixed matrix membrane, the membrane The separation performance is better; while the porous metal-organic cage complex ZRT-1-4F prepared by the present invention has the best separation performance at a lower filling amount (3.2wt%), and then with the increase of its filling amount The separation performance of the membrane decreases with increasing.
Owner:BEIJING UNIV OF TECH
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