The invention discloses a floating gate memory. The floating gate memory comprises a substrate, an insulating
dielectric layer, a buffer layer, a channel layer, a tunneling layer, a source
electrode, a drain
electrode, a floating gate layer, a
barrier layer, a gate
electrode and a gate
electrode contact material layer, wherein the buffer layer covers one surface of the insulating
dielectric layer back to the substrate, the channel layer covers one surface of the buffer layer back to the insulating
dielectric layer, the tunneling layer covers the part of the surface, back to the buffer layer, of the channel layer, the floating gate layer covers a surface, back to the channel layer, of the tunneling layer, the
barrier layer covers a surface, back to the tunneling layer, of the floating gate layer, and the gate electrode covers a surface, back to the floating gate layer, of the
barrier layer. According to the floating gate memory, the
advantage of no
dangling bond of a two-dimensional material can be utilized, the interface defect is reduced, the
threshold voltage of the floating gate memory is reduced, and
power consumption of the floating gate memory is further reduced. The invention also provides a preparation method of the floating gate loss memory.