40results about How to "Avoid Interface Defects" patented technology

The invention discloses a bismuth ferrite base film layer stacked structure capacitor and a preparation method thereof, wherein the capacitor comprises a bottom electrode, a substrate, a buffer layer, a ferroelectric film layer and a metal point electrode in sequence from the bottom to top; the buffer layer is a manganese-doped barium strontium titanate film, the chemical formula is Ba0.6Sr0.4Ti(1-x)MnxO3, x is the mole equivalent of element manganese, and x is equal to 0.005-0.05; and the ferroelectric film layer is a bismuth ferrite base film, the chemical formula is Bi(1-y)LnyFeO3, wherein Ln is one of lanthanide, y is the mole equivalent of lanthanide, and y is equal to 0.01-0.2. The preparation method is simple, and the obtained capacitor is a storage cell of a ferro-electric field effect transistor; and the capacitor overcomes the defects that the bismuth ferrite base film capacitor on ordinary silicon substrate has the defects of poor interface performance and high working voltage, and has good energy storage performance.

The invention discloses a high-covering black UV silkscreen printing ink. A preparation method for the high-covering black UV silkscreen printing ink comprises the following steps: preheating acrylate and then mixing the preheated acrylate with a part of active monomer; then adding a dispersant and carrying out primary dispersion; then successively adding pigment and a filling material and carrying out secondary dispersion; carrying out grinding to obtain color paste; mixing a phosphine oxide photoinitiator with residual active monomer; and adding the color paste, an organosilicon antifoaming agent and an organosilicon leveling agent and carrying out uniform dispersion so as to obtain the high-covering black UV silkscreen printing ink. The high-covering black UV silkscreen printing ink provided by the invention is reasonable in composition; all the components are in good compatibility; and the prepared printing ink has excellent comprehensive properties and good storage performance, and the viscosity of the printing ink is suitable for silkscreen printing. The printing ink does not need increase in the usage amounts of components like carbon black, prevents unfavorable influence of the components on the appearance and light shading performance of a product, and can meet light shading requirements of the product after only one printing and under the condition of a thickness of 7 to 8 micrometers, so unexpected technical effects are obtained.

The invention relates to the technical field of composite materials and polymer functional materials, in particular to a preparation method and application of a gradient hydrogel soft drive. The preparation method of the gradient hydrogel soft drive comprises the steps that a certain amount of negatively-charged ascidian cellulose nanocrystals, N-isopropenyl acrylamide, an auxiliary and water areevenly mixed at the certain temperature, and thus a mixed solution is obtained; and the mixed solution is induced through a direct current electric field, and then in-situ thermal-initiation polymerization is conducted to prepare the gradient hydrogel soft drive. The gradient hydrogel soft drive is prepared from the ascidian cellulose nanocrystals and the poly N-isopropenyl acrylamide in a compounded mode; the negatively-charged ascidian cellulose nanocrystals are subjected to electric field force and thus move to form the gradient concentration, and finally, in-situ initiation polymerizationis conducted to form the hydrogel soft drive of a gradient cross-linking structure; and the hydrogel soft drive has the controllable temperature-sensitive bending rate and fatigue resistance.

The invention discloses a mixed matrix membrane, a preparation method and application thereof, and belongs to the fields of material science and gas separation. The mixed matrix membrane comprises a high-molecular polymer and a porous metal-organic cage complex ZRT-1-4F, wherein the content of the porous metal-organic cage complex ZRT-1-4F in the mixed matrix membrane is 1-12 wt%. According to the invention, the porous metal-organic cage complex ZRT-1-4F filled in the mixed matrix membrane is different from a traditional inorganic filling material, wherein the separation performance of the membrane is better along with the increase of the filling amount of the traditional inorganic filling material in the mixed matrix membrane, and the porous metal-organic cage complex ZRT-1-4F prepared by the method has the best separation performance when the filling amount is low (3.2 wt%), and then the separation performance of the membrane is reduced along with the increase of the filling amount of the porous metal-organic cage complex ZRT-1-4F.

The invention relates to a method for simultaneously enlarging the size and the quantity of monocrystal diamond seed crystals. The method comprises the following steps: firstly, allowing monocrystalline diamond with a size of a*a*b to grow to a height h along the b direction by adopting a chemical vapor deposition (CVD) method; cutting the monocrystal diamond along the diagonal line of an a*h surface to form two triangular cylindrical monocrystal diamonds; carrying out homogeneous epitaxial growth of the diamonds with the cutting surfaces of the triangular cylindrical monocrystal diamonds as growth surfaces; and when a growth height reaches h1, cutting each monocrystal diamond into four sections along a connecting line between a bottom vertex and the left and right points of the top and aparallel growth direction passing through the bottom vertex to obtain two obtuse-triangle cylindrical monocrystal diamond seed crystals and two right-triangle cylindrical monocrystal diamond seed crystals. The method is simple to operate, can quickly change small-size monocrystal diamond seed crystals into large-size monocrystal diamond seed crystals, increases the sizes and the numbers of the monocrystal diamonds and effectively avoids interface defects and polycrystals introduced by a splicing method.

The invention discloses an LED light emitting material, belongs to the technical field of semiconductor photoelectron materials and devices and solves the technical problem that LED light emitting materials are low in light emitting efficiency in the prior art. The LED light emitting material comprises a P(I)N junction and a hole injection layer, the hole injection layer closely contacts with a p-type layer of the P(I)N junction, carrier concentration of the hole injection layer is larger than hole concentration in the p-type layer, and thickness of the hole injection layer is 50nm-3micron. The LED light emitting material is of a homogeneous structure, so that interface defect caused by heterostructure is avoided; hole concentration of the p-type layer is increased by adopting the hole injection layer, so that the LED light emitting material has high light emitting efficiency.

The invention discloses a light-driven shape-programmable MXene composite hydrogel driver and a preparation method thereof. The light-driven shape-programmable MXene composite hydrogel driver is formed by copolymerization of a polymerizable MXene nano monomer and thermosensitive PNIPAM hydrogel in-situ free radicals. The distribution of MXene and the anisotropy of a hydrogel network can be controlled by utilizing a low electric field, so that various biologically excited programmable anisotropic hydrogel drivers are developed by controlling an ITO electrode pattern, a direct-current electric field direction and mask-assisted ultraviolet polymerization. The invention provides a new development insight of a programmable and reconfigurable intelligent driver, and the intelligent driver can have application prospects in various fields.

The invention provides a packaging process of a power electronic transformer based on 3D photocuring printing, and relates to the technical field of transformer packaging. The process comprises the following steps: printing a skeleton network, pouring, applying voltage, applying ultrasonic waves, electrifying, thermally curing and polishing. An epoxy resin printing framework network is adopted to position and fix an iron core and a winding at the first stage of packaging, the winding is effectively prevented from loosening or deforming in the packaging process, epoxy resin containing filler is adopted as a pouring body, the thermal resistance and the expansion coefficient can be remarkably reduced, the heat dissipation performance is improved, and the cracking risk is reduced; the epoxy resin is easy to electrowet a solid in a high-voltage electric field; ultrasonic waves have the characteristic of improving the infiltration capacity, and the infiltration effect of filler-containing resin and a framework network is further improved; the winding is electrified, so that the winding is firstly heated, the casting body is solidified from inside to outside, and external resin is allowed to perform automatic feeding on the shrinkage cavity, so that the internal defects of packaging are remarkably reduced, and the reliability of packaging is improved.

The invention relates to a preparation method of a GaAs-based horizontal plasma pin diode for a multi-layer holographic antenna. The multi-layer holographic antenna comprises a semiconductor substrate GeOI, an antenna module, a first holographic round ring and a second holographic round ring, wherein the antenna module, the first holographic round ring and the second holographic round ring all comprises GaAs-based plasma pin diodes which are sequentially connected in series. The preparation method of the GaAs-based plasma pin diode comprises the steps of selecting a GeOI substrate in a certain crystal direction, depositing a GaAs layer on a surface of the substrate and forming an isolation region by metal-organic chemical vapor deposition (MOCVD); etching the substrate to form a P-type groove and an N-type groove and form a first P-type active region and a first N-type active region; and filling the P-type groove and N-type groove, forming a lead on the substrate to complete the preparation of the GaAs-based plasma pin diode. According to the embodiment, the high-performance GaAs-based plasma pin diode can be prepared and provided for forming the multi-layer holographic antenna by a deep groove isolation technology and an ion injection process.

The invention discloses an environment-friendly flame-retardant mortar, which is composed of 200-400 parts by mass of ordinary ash, 300-900 parts by mass of fine sand, 10-50 parts by mass of rubber powder, 1-5 parts by mass of wood fiber, 1-5 parts by mass of cellulose ether, 20-60 parts by mass of fireproof powder, 2-5 parts by mass of talc powder and 300-860 parts by mass of water. The above components are mixed and stirred evenly during preparation, the environment-friendly flame-retardant mortar evenly coats a heat-insulation board when used, the environment-friendly flame-retardant mortaris not only effective in flame retardance and convenient in construction, but also can effectively combine with a plastering mortar to avoid interface defects.

A method for producing a composite material by plating a band arrangement with a top side (O) and a bottom side (U), wherein the band arrangement comprises at least a first strip and a second strip, which form between them a filling channel, wherein the band arrangement comprises at least one filler strip, wherein the abovementioned band arrangement is plated, wherein a part of the filler strip, during the plating, is extruded into the filling channel; and a composite material, characterized in that it has been produced according to the method as disclosed.

The invention discloses a floating gate memory. The floating gate memory comprises a substrate, an insulating dielectric layer, a buffer layer, a channel layer, a tunneling layer, a source electrode, a drain electrode, a floating gate layer, a barrier layer, a gate electrode and a gate electrode contact material layer, wherein the buffer layer covers one surface of the insulating dielectric layer back to the substrate, the channel layer covers one surface of the buffer layer back to the insulating dielectric layer, the tunneling layer covers the part of the surface, back to the buffer layer, of the channel layer, the floating gate layer covers a surface, back to the channel layer, of the tunneling layer, the barrier layer covers a surface, back to the tunneling layer, of the floating gate layer, and the gate electrode covers a surface, back to the floating gate layer, of the barrier layer. According to the floating gate memory, the advantage of no dangling bond of a two-dimensional material can be utilized, the interface defect is reduced, the threshold voltage of the floating gate memory is reduced, and power consumption of the floating gate memory is further reduced. The invention also provides a preparation method of the floating gate loss memory.

The invention relates to a GaAs-based solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and depositing a GaAs layer and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer GaAs of the substrate; performing ion injection in the P type trench and the N type trench to form a first P type active region and a first N type active region; filling the P type trench and the N type trench, and adopting ion injection to form a second P type active region and a second N type active region in the top layer GaAs of the substrate; and forming leads on the substrate to complete the preparation of the GaAs-based solid-state plasma PiN diode. According to the embodiments, the high-performance GaAs-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared by adopting a deep trench isolation technology and the ion injection process.

An embodiment of the present application provides a heterojunction tunneling field effect transistor and a manufacturing method thereof, comprising: a first insulating layer covering the upper surface of the substrate, and a first heterojunction material layer covering the upper surface of the first insulating layer One end of the source is arranged on the top, the source is arranged on one end of the first heterojunction material layer, a second insulating layer is arranged around the other end of the first heterojunction material layer, and the isolation layer is arranged on the heterojunction layer, The isolation layer covers the inner side of the source electrode; the second heterojunction material layer covers the other end of the first heterojunction material layer, the second insulating layer, and the second insulating layer, forming a heterojunction with the first heterojunction material layer. material junction, the drain is arranged on the other end of the second heterojunction layer opposite to the source; the gate dielectric layer covers the position between the source and the drain on the second heterojunction material layer, and the gate is arranged on on the gate dielectric layer. By setting the second insulating layer for isolation, the leakage current caused by the edge state is significantly reduced, and a heterojunction is formed by using two-dimensional materials, which avoids interface defects caused by lattice mismatch.

The invention provides a TiO2-Ti2O3(H2O)2(C2O4).H2O heterojunction material and a preparation method thereof. The preparation method of the TiO2-Ti2O3(H2O)2(C2O4).H2O heterojunction material comprisesthe following steps: adding titanium potassium oxalate into deionized water, and carrying out stirring until the titanium potassium oxalate is completely dissolved to obtain a K2TiO.(C2O4)2 solutionwith a certain concentration; adding hydrochloric acid into the K2TiO.(C2O4)2 solution obtained in the step (1) to serve as a precursor solution; performing hydrothermal treatment on the precursor solution obtained in the step (2) to obtain a reaction product A; naturally cooling the reaction product A obtained in the step (3) to room temperature, centrifugally separating the reaction product A, and carrying out washing to obtain a reaction product B; and drying the reaction product B obtained in the step (4) to obtain the TiO2-Ti2O3(H2O)2(C2O4).H2O heterojunction material. The TiO2-Ti2O3(H2O)2(C2O4).H2O heterojunction material prepared by the invention is in a Janus morphology, has the characteristics of high photocatalytic activity, small charge transfer resistance, high charge transferefficiency and high photocurrent density, can be synthesized in one step by a simple method, and is simple in preparation process and suitable for popularization and application.