41results about How to "Avoid Interface Defects" patented technology

The invention provides a deposition method of a silicon oxide thin film and a preparation method of a low temperature polycrystalline silicon TFT substrate. According to the deposition method of the silicon oxide thin film, ultraviolet light is introduced as auxiliary energy for a silicon oxide deposition reaction, oxygen is decomposed into free oxygen through the ultraviolet light, the ultraviolet light reacts with organosilane gas to generate silicon oxide, thereby the silicon oxide is deposited in an environment without plasmas for forming the silicon oxide thin film, interface defects and surface damage caused due to the fact that the surface of the silicon oxide thin film is impacted by the high energy plasmas are avoided, and film forming quality of the silicon oxide thin film is improved. According to the preparation method of the low temperature polycrystalline silicon TFT substrate, the silicon oxide thin film in a gate electrode insulating layer is fabricated through the method that the organosilane gas reacts with the oxygen to generate the silicon oxide in the environment with ultraviolet irradiation, surface defects and interface damage caused by plasmas to the surface of the silicon oxide thin film in the current plasma reinforced chemical vapor deposition method are avoided, thereby film forming quality of the silicon oxide thin film is improved, and the electrical property of a TFT is enhanced.

A method for manufacturing a semiconductor device may include the following steps: providing a semiconductor substrate structure; providing a substrate-connecting barrier layer on the semiconductor substrate structure; performing one or more iterations of a composite-layer formation process to provide a gate-connecting barrier layer, wherein the composite-layer formation process comprises: applying a silicon-containing compound set to an outmost existing barrier layer to form an amorphous silicon layer, and forming an overlying barrier layer on the amorphous silicon layer, wherein the substrate-connecting barrier layer is the outmost existing barrier layer for a first iteration of the one or more iterations, and wherein the gate-connecting barrier layer is the overlying barrier layer resulted from a last iteration of the one or more iterations; and providing a conductive gate layer on the gate-connecting barrier layer.

The invention is suitable for the technical field of organic electroluminescence and provides a charge regeneration structure as well as a preparation method and an application thereof. The charge regeneration structure comprises a phase-doped p-type compound, an organic material with the electronic transmission capacity and an n-type semiconductor material, wherein the homo energy level of the p-type compound is more than 5.0, and the weight percentage is 10-40 percent; and the weight percentage of the n-type semiconductor material is 30-50 percent. The charge regeneration structure has the beneficial effects that as the n-type semiconductor material, the p-type compound and the organic material with the electronic transmission ability commonly form a single-layer structure, the interface defect of the charge regeneration structure is avoided, so that the resistance of the charge regeneration structure is greatly reduced, and the starting voltage of the electroluminescent device is remarkably reduced; and the preparation method has the advantages of simplicity in operation and low cost and is very suitable for industrial production.

The invention provides a method for preparing an oxygen-barrier PET bottle and its product. The method is as follows: add the flake alumina after water dispersion and alcohol replacement into the alcohol mixture, heat and reflux in a water bath to obtain surface-modified Flaky alumina-alcohol mixed suspension; stir terephthalic acid, flake alumina-alcohol mixed solution, and ethylene glycol antimony under nitrogen protection and then react; after the reaction, turn on the vacuum pump to discharge ethylene glycol; When the molecular weight of the product increases to the target value, the materials in the reactor are extruded with nitrogen, cooled and granulated to obtain flaky alumina / PET modified masterbatch; pure PET resin pellets and flaky alumina / PET modified Mix the permanent masterbatch to form a blend, injection mold it into a preform, and then blow mold it to obtain a flaky alumina / PET bottle product. The product produced by the invention has stable mechanical properties and high-efficiency oxygen barrier properties, can eliminate the hidden danger of fillers migrating to food; and has single components, can be recycled without separation, has low recycling cost and meets environmental protection requirements.

The invention provides a packaging process of a power electronic transformer based on 3D photo-curing printing, and relates to the technical field of transformer packaging. The process includes the following steps: printing skeleton network, pouring, applying voltage, applying ultrasonic waves, passing current, heat curing, and grinding; at the beginning of packaging, epoxy resin printing skeleton network is used to position and fix the iron core and winding, effectively preventing the winding from Loose or deformed during the packaging process, using epoxy resin containing fillers as the casting body can significantly reduce thermal resistance and expansion coefficient, improve heat dissipation performance, and reduce the risk of cracking; epoxy resin is easy to electrowet to solids in high-voltage electric fields; ultrasonic It has the characteristics of improving the wetting ability, further improving the wetting effect of the filler-containing resin and the skeleton network; electrifying the winding to make the winding heat first, and the casting body is cured from the inside to the outside, allowing the external resin to automatically feed the shrinkage cavity, thereby significantly reducing Encapsulates internal defects and improves the reliability of the encapsulation.

The invention discloses a bismuth ferrite base film layer stacked structure capacitor and a preparation method thereof, wherein the capacitor comprises a bottom electrode, a substrate, a buffer layer, a ferroelectric film layer and a metal point electrode in sequence from the bottom to top; the buffer layer is a manganese-doped barium strontium titanate film, the chemical formula is Ba0.6Sr0.4Ti(1-x)MnxO3, x is the mole equivalent of element manganese, and x is equal to 0.005-0.05; and the ferroelectric film layer is a bismuth ferrite base film, the chemical formula is Bi(1-y)LnyFeO3, whereinLn is one of lanthanide, y is the mole equivalent of lanthanide, and y is equal to 0.01-0.2. The preparation method is simple, and the obtained capacitor is a storage cell of a ferro-electric field effect transistor; and the capacitor overcomes the defects that the bismuth ferrite base film capacitor on ordinary silicon substrate has the defects of poor interface performance and high working voltage, and has good energy storage performance.