Bismuth ferrite base film layer stacked structure capacitor and preparation method thereof

A stacked structure, capacitor technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large leakage current, high interface trap density, and inconformity with the working voltage of silicon-based integrated circuits, etc., to achieve good crystal Lattice matching relationship, large dielectric constant, good insulation effect

Inactive Publication Date: 2011-10-19
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The inventors aimed at the existing metal-BiFeO 3 Base film-(buffer layer)-semiconductor structure capacitors have shortcomings such as large interface trap density, large leakage current, and failure to meet the requirements of the working voltage of silicon-based integrated circuits. Further exploration and research have been carried out. Changes in film composition and composition of dielectric films to overcome these disadvantages

Method used

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  • Bismuth ferrite base film layer stacked structure capacitor and preparation method thereof
  • Bismuth ferrite base film layer stacked structure capacitor and preparation method thereof
  • Bismuth ferrite base film layer stacked structure capacitor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Preparation of Au / Bi 0.9 La 0.1 FeO 3 / Ba 0.6 Sr 0.4 Ti 0.97 mn 0.03 o 3 / Si capacitors, the steps are as follows:

[0055] (1) Ba 0.6 Sr 0.4 Ti 0.97 mn 0.03 o 3 Film preparation

[0056] Weigh 0.3096g Ba(CH 3 COO) 2 , 0.0163g Mn(CH 3 COO) 3 2H 2 O, 0.1744g Sr(CH 3 COO) 2 0.5H 2 Dissolve O in 19.41ml of glacial acetic acid, stir magnetically at 60°C, and stop heating when it is completely dissolved; when the solution is cooled to room temperature, add acetylacetone and tetratitanate at a volume ratio of 1:1 to the above solution For isopropyl ester, first add 0.59ml acetylacetone, then add 0.59ml tetraisopropyl titanate dropwise, and continue to stir until the distribution is even; finally add 19.41ml ethylene glycol methyl ether, and continue stirring at room temperature for 6 hours. Filter the solution into the drop bottle with a filter head with a pore size of 0.2 μm to obtain a uniform and transparent 0.05mol / L 40ml Ba 0.6 Sr 0.4 Ti 0.97 mn ...

Embodiment 2

[0063] Preparation of Au / Bi 0.95 Ce 0.05 FeO 3 / Ba 0.6 Sr 0.4 Ti 0.955 mn 0.045 o 3 / Si capacitors, the steps are as follows:

[0064] (1) Ba 0.6 Sr 0.4 Ti 0.955 mn 0.045 o 3 Film preparation

[0065] Weigh 0.2477g Ba(CH 3 COO) 2 , 0.0195g Mn(CH 3 COO) 3 2H 2 O, 0.1395g Sr(CH 3 COO) 2 0.5H 2 Dissolve O in 26.04ml of glacial acetic acid, stir magnetically at 60°C, and stop heating when it is completely dissolved; when the solution is cooled to room temperature, add acetylacetone and tetratitanate at a volume ratio of 1:1 to the above solution For isopropyl ester, first add 0.47ml acetylacetone, then add 0.47ml tetraisopropyl titanate dropwise, and continue to stir until the distribution is uniform; finally add 13.02ml ethylene glycol methyl ether, and continue stirring at room temperature for 6 hours. Filter the solution into the drop bottle with a filter head with a pore size of 0.2 μm to obtain a uniform and transparent 0.04mol / L 40ml Ba 0.6 Sr 0.4 Ti ...

Embodiment 3

[0071] Preparation of Au / Bi 0.85 SM 0.15 FeO 3 / Ba 0.6 Sr 0.4 Ti 0.98 mn 0.02 o 3 / Si capacitors, the steps are as follows:

[0072] (1) Ba 0.6 Sr 0.4 Ti 0.98 mn 0.02 o 3 Film preparation

[0073] Weigh 0.1239g Ba(CH 3 COO) 2 , 0.0040g Mn(CH 3 COO) 3 2H 2 O, 0.0698g Sr(CH 3 COO) 2 0.5H 2 Dissolve O in 23.71ml of glacial acetic acid, stir magnetically at 60°C, and stop heating when it is completely dissolved; when the solution is cooled to room temperature, add acetylacetone and tetratitanate at a volume ratio of 1:1 to the above solution. For isopropyl ester, first add 0.24ml acetylacetone, then add 0.24ml tetraisopropyl titanate dropwise, and continue to stir until the distribution is uniform; finally add 15.81ml ethylene glycol methyl ether, and continue stirring at room temperature for 6 hours. Filter the solution into the drop bottle with a filter head with a pore size of 0.2 μm to obtain a uniform and transparent 0.02mol / L 40ml Ba 0.6 Sr 0.4 Ti 0.9...

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Abstract

The invention discloses a bismuth ferrite base film layer stacked structure capacitor and a preparation method thereof, wherein the capacitor comprises a bottom electrode, a substrate, a buffer layer, a ferroelectric film layer and a metal point electrode in sequence from the bottom to top; the buffer layer is a manganese-doped barium strontium titanate film, the chemical formula is Ba0.6Sr0.4Ti(1-x)MnxO3, x is the mole equivalent of element manganese, and x is equal to 0.005-0.05; and the ferroelectric film layer is a bismuth ferrite base film, the chemical formula is Bi(1-y)LnyFeO3, wherein Ln is one of lanthanide, y is the mole equivalent of lanthanide, and y is equal to 0.01-0.2. The preparation method is simple, and the obtained capacitor is a storage cell of a ferro-electric field effect transistor; and the capacitor overcomes the defects that the bismuth ferrite base film capacitor on ordinary silicon substrate has the defects of poor interface performance and high working voltage, and has good energy storage performance.

Description

technical field [0001] The invention relates to a bismuth ferrite-based thin-film laminate structure capacitor and a preparation method thereof, which are especially suitable for non-volatile and non-destructive readout high-density memory and integrated ferroelectric devices, and belong to the technical field of new microelectronic materials. Background technique [0002] A metal / ferroelectric film / semiconductor (MFS) capacitor is the basic storage unit of a ferroelectric field effect transistor (FFET). Ferroelectric field effect transistors use ferroelectric thin films as the material of the gate dielectric layer, and use the polarization state of the ferroelectric thin films to control the conductance of the semiconductor surface to complete the storage function. The operation of writing data is: by applying a positive or negative gate voltage greater than the coercive voltage, the ferroelectric film is in a positive or negative polarization state, representing "0" and "1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/02
Inventor 杨长红赵媛媛吴海涛胡广达
Owner UNIV OF JINAN
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