Charge regeneration structure, its preparation method and application

A charge and electron transport technology, applied in the direction of chemical instruments and methods, circuits, electrical components, etc., can solve the problem of high starting voltage of light-emitting devices, and achieve the effects of avoiding interface defects, low cost, and simple operation

Inactive Publication Date: 2016-03-30
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a charge regeneration structure, which solves the technical problem of high start-up voltage of organic electroluminescent devices caused by interface defects in the charge regeneration structure in the prior art

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  • Charge regeneration structure, its preparation method and application

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preparation example Construction

[0044] The embodiment of the present invention further provides a method for preparing the above-mentioned charge regeneration structure, including the following steps:

[0045] Mixing a p-type semiconductor material, an organic material with electron transport capability, and an n-type semiconductor material to obtain a mixture, the homo energy level of the p-type semiconductor material is greater than 5.0, and the weight percentage is 10-40%; the n-type semiconductor material The weight percentage of the material is 30-50%;

[0046] The mixture is vapor-deposited, sputtered or spin-coated to form a charge regeneration structure.

[0047] Specifically, in the preparation method of the charge regeneration structure in the embodiment of the present invention, the evaporation, sputtering, or spin coating method used is not specifically limited, and the substrate used in evaporation, sputtering, or spin coating is the one using the charge regeneration structure The light-emittin...

Embodiment 1

[0057] The method for preparing an organic electroluminescent device according to an embodiment of the present invention includes the following steps:

[0058] Prepare the first light-emitting unit:

[0059] Evaporate on ITO glass, form (molybdenum trioxide) hole injection layer, evaporate on this hole injection layer, form (Alq 3 ) a light-emitting layer, vapor-deposited on the light-emitting layer to form a (PBD) electron transport layer;

[0060] Prepare the charge regeneration structure:

[0061] Mix molybdenum trioxide, Bphen, and cesium azide to obtain a mixture, the weight percentage of the molybdenum trioxide is 20%; the weight percentage of the cesium azide is 40%, and then the mixture is placed in the first light-emitting unit Evaporation is carried out on the electron transport layer to form a charge regeneration structure with a thickness of 15 nanometers;

[0062] Preparation of the second light-emitting unit:

[0063] Evaporate and form (NPB) hole transport l...

Embodiment 2

[0067] The method for preparing an organic electroluminescent device according to an embodiment of the present invention includes the following steps:

[0068] Prepare the first light-emitting unit:

[0069] Sputtering on ITO glass, forming (molybdenum trioxide) hole injection layer, vapor deposition on the hole injection layer, forming (NPB) hole transport layer, sputtering on the hole transport layer, forming (NPB ) electron blocking layer, sputtering on the electron blocking layer, forming (AND) light-emitting layer, evaporation on the light-emitting layer, forming (Alq 3 ) hole blocking layer, sputtering on the hole blocking layer, forming (Alq 3 ) electron transport layer;

[0070] Prepare the charge regeneration structure:

[0071] Molybdenum trioxide, BALQ, cesium azide are mixed to obtain a mixture, the molybdenum trioxide is 10% by weight relative to the BALQ; the cesium azide is 20% by weight relative to the BALQ, and then The mixture is sputtered on the electron...

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Abstract

The invention is suitable for the technical field of organic electroluminescence and provides a charge regeneration structure as well as a preparation method and an application thereof. The charge regeneration structure comprises a phase-doped p-type compound, an organic material with the electronic transmission capacity and an n-type semiconductor material, wherein the homo energy level of the p-type compound is more than 5.0, and the weight percentage is 10-40 percent; and the weight percentage of the n-type semiconductor material is 30-50 percent. The charge regeneration structure has the beneficial effects that as the n-type semiconductor material, the p-type compound and the organic material with the electronic transmission ability commonly form a single-layer structure, the interface defect of the charge regeneration structure is avoided, so that the resistance of the charge regeneration structure is greatly reduced, and the starting voltage of the electroluminescent device is remarkably reduced; and the preparation method has the advantages of simplicity in operation and low cost and is very suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of organic electroluminescence, and in particular relates to a charge regeneration structure, its preparation method and application. Background technique [0002] At present, in order to improve the luminous brightness and luminous efficiency, more and more attention is paid to stacked organic electroluminescent devices. This structure usually uses a charge regeneration structure as a connecting layer to connect several light-emitting units in series. Compared with unit devices, stacked structure devices often have double the current efficiency and luminous brightness. The initial brightness of stacked OLEDs is relatively large. When measured at the same current density, it is converted into the initial brightness of unit devices. Stacked devices It will have a longer lifespan, and this stacked device can also easily mix light-emitting units of different colors in series to form white light, thereby realizing the emi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C09K11/06
Inventor 周明杰王平黄辉钟铁涛
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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