Method for simultaneously enlarging size and quantity of monocrystal diamond seed crystals
A single crystal diamond, diamond technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of high technical difficulty of large size diamond single crystal
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Embodiment 1
[0032] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:
[0033] 1) Primary deposition: Clean the single-crystal diamond seed crystal 1 with orientation (100) and size 5mm×5mm×1mm and the molybdenum carrier 2 specially matched with it, and put them into a microwave plasma chemical vapor deposition (MPCVD) device In the vacuum chamber, when the vacuum degree of the vacuum chamber drops to 5×10 -4 After Pa is below, pass H 2, when the air pressure reaches 0.8KPa, turn on the microwave source to excite the plasma, and the input power is 1KW; as the air pressure increases, slowly increase the input power and feed CH 4 and N 2 , until the process required for stable deposition is achieved: microwave power is 5kW, H 2 、CH 4 and N 2 The flow rates are 300sccm, 15sccm and 1sccm, and the temperature is 1000°C. When the single crystal diamond seed crystal 1 grows to 5.3mm along the height direction,...
Embodiment 2
[0036] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:
[0037] 1) Primary deposition: Clean the single crystal diamond seed crystal 1 with orientation (100) and size 10mm×10mm×1mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of the MPCVD device, wait for vacuum Chamber vacuum down to 1×10 5 After Pa is below, pass H 2 , when the air pressure reaches 1KPa, turn on the microwave source to excite the plasma, and the input power is 1.5KW; as the air pressure increases, slowly increase the input power and pass in CH 4 , until the process required for stable deposition is achieved: microwave power is 10kW, CH 4 and H 2 The flow rates are 400sccm and 30sccm, and the temperature is 950°C. When the single crystal diamond seed crystal 1 grows to 10.2-10.4mm along the height direction, reduce the air pressure and power, and turn off the microwave when the air p...
Embodiment 3
[0041] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:
[0042] 1) Primary deposition: clean the single crystal diamond seed crystal 1 with orientation (100) and size 8mm×8mm×0.5mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of MPCVD device, wait for The vacuum degree of the vacuum chamber is reduced to 1×10 - 4 After Pa is below, pass H 2 , when the air pressure reaches 1.2KPa, turn on the microwave source to excite the plasma, and the input power is 2KW; as the air pressure increases, slowly increase the input power and feed CH 4 , N 2 and O 2 , until the process required for stable deposition is achieved: microwave power is 4kW, H 2 、CH 4 , N 2 and O 2 The flow rates are 200sccm, 20sccm, 0.2sccm and 4sccm respectively, and the temperature is 920°C. When the single crystal diamond seed crystal 1 grows to 6.2-6.4mm along the height direction, r...
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