Method for simultaneously enlarging size and quantity of monocrystal diamond seed crystals

A single crystal diamond, diamond technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of high technical difficulty of large size diamond single crystal

Active Publication Date: 2020-10-30
山西国脉金晶碳基半导体材料产业研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a relatively simple method for enlarging the size and quantity of single crystal

Method used

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  • Method for simultaneously enlarging size and quantity of monocrystal diamond seed crystals

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Embodiment 1

[0032] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:

[0033] 1) Primary deposition: Clean the single-crystal diamond seed crystal 1 with orientation (100) and size 5mm×5mm×1mm and the molybdenum carrier 2 specially matched with it, and put them into a microwave plasma chemical vapor deposition (MPCVD) device In the vacuum chamber, when the vacuum degree of the vacuum chamber drops to 5×10 -4 After Pa is below, pass H 2, when the air pressure reaches 0.8KPa, turn on the microwave source to excite the plasma, and the input power is 1KW; as the air pressure increases, slowly increase the input power and feed CH 4 and N 2 , until the process required for stable deposition is achieved: microwave power is 5kW, H 2 、CH 4 and N 2 The flow rates are 300sccm, 15sccm and 1sccm, and the temperature is 1000°C. When the single crystal diamond seed crystal 1 grows to 5.3mm along the height direction,...

Embodiment 2

[0036] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:

[0037] 1) Primary deposition: Clean the single crystal diamond seed crystal 1 with orientation (100) and size 10mm×10mm×1mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of the MPCVD device, wait for vacuum Chamber vacuum down to 1×10 5 After Pa is below, pass H 2 , when the air pressure reaches 1KPa, turn on the microwave source to excite the plasma, and the input power is 1.5KW; as the air pressure increases, slowly increase the input power and pass in CH 4 , until the process required for stable deposition is achieved: microwave power is 10kW, CH 4 and H 2 The flow rates are 400sccm and 30sccm, and the temperature is 950°C. When the single crystal diamond seed crystal 1 grows to 10.2-10.4mm along the height direction, reduce the air pressure and power, and turn off the microwave when the air p...

Embodiment 3

[0041] A method for enlarging the size and quantity of single crystal diamond seed crystals simultaneously, comprising the following steps:

[0042] 1) Primary deposition: clean the single crystal diamond seed crystal 1 with orientation (100) and size 8mm×8mm×0.5mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of MPCVD device, wait for The vacuum degree of the vacuum chamber is reduced to 1×10 - 4 After Pa is below, pass H 2 , when the air pressure reaches 1.2KPa, turn on the microwave source to excite the plasma, and the input power is 2KW; as the air pressure increases, slowly increase the input power and feed CH 4 , N 2 and O 2 , until the process required for stable deposition is achieved: microwave power is 4kW, H 2 、CH 4 , N 2 and O 2 The flow rates are 200sccm, 20sccm, 0.2sccm and 4sccm respectively, and the temperature is 920°C. When the single crystal diamond seed crystal 1 grows to 6.2-6.4mm along the height direction, r...

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Abstract

The invention relates to a method for simultaneously enlarging the size and the quantity of monocrystal diamond seed crystals. The method comprises the following steps: firstly, allowing monocrystalline diamond with a size of a*a*b to grow to a height h along the b direction by adopting a chemical vapor deposition (CVD) method; cutting the monocrystal diamond along the diagonal line of an a*h surface to form two triangular cylindrical monocrystal diamonds; carrying out homogeneous epitaxial growth of the diamonds with the cutting surfaces of the triangular cylindrical monocrystal diamonds as growth surfaces; and when a growth height reaches h1, cutting each monocrystal diamond into four sections along a connecting line between a bottom vertex and the left and right points of the top and aparallel growth direction passing through the bottom vertex to obtain two obtuse-triangle cylindrical monocrystal diamond seed crystals and two right-triangle cylindrical monocrystal diamond seed crystals. The method is simple to operate, can quickly change small-size monocrystal diamond seed crystals into large-size monocrystal diamond seed crystals, increases the sizes and the numbers of the monocrystal diamonds and effectively avoids interface defects and polycrystals introduced by a splicing method.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a method for simultaneously enlarging the size and quantity of single crystal diamond seed crystals. Background technique [0002] Single crystal diamond has excellent physical and chemical properties and is widely used in many fields such as industry, science and technology, national defense, and medical care. However, natural diamond reserves are small and expensive. Chemical vapor deposition (CVD) is currently the main method for synthesizing large-sized single crystal diamond. Under normal circumstances, the size of diamond single crystal synthesized by CVD depends on the size of the seed crystal, and the size of the synthesized single crystal is generally equal to or smaller than the seed crystal. Therefore, the preparation technology of large-size diamond single crystal and seed crystal has always been a technical problem to be solved urgently in this fi...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/04
CPCC30B25/00C30B29/04
Inventor 于盛旺郑可高洁王永胜吴艳霞申艳艳邢学刚
Owner 山西国脉金晶碳基半导体材料产业研究院有限公司
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