Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for enlarging the size and quantity of single crystal diamond seeds

A single crystal diamond and diamond technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of high technical difficulty of large-size diamond single crystal, avoid interface defects and polycrystals, save costs, Simple to use effects

Active Publication Date: 2021-08-03
山西国脉金晶碳基半导体材料产业研究院有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for enlarging the size and quantity of single crystal diamond seed crystals in order to solve the problem of high technical difficulty in preparing large-size diamond single crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for enlarging the size and quantity of single crystal diamond seeds

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0038] 1) One-time deposition: clean the single crystal diamond seed crystal with orientation (100), size length×width×height 5mm×5mm×1mm and molybdenum holder 2 specially matched with it, and put it into microwave plasma chemical vapor deposition In the vacuum chamber of the (MPCVD) device, the vacuum degree of the vacuum chamber is reduced to 1×10 -4 After Pa is below, pass H 2 , when the air pressure reaches 0.6kPa, turn on the microwave source to excite the plasma, and the input power is 0.8KW; as the air pressure increases, slowly increase the input power and introduce CH 4 , until the process required for stable deposition is achieved: microwave power is 5kW, H 2 and CH 4 The flow rates are 400sccm and 20sccm respectively, and the temperature is 850°C. When the single crystal diamond seed grows to 5.3mm in the height direction, reduce the air pressure ...

Embodiment 2

[0042] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0043] 1) Primary deposition: clean the single crystal diamond seed crystal with orientation (100) and size 8mm×8mm×2mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of MPCVD device, wait for the vacuum chamber The chamber vacuum is reduced to 5×10 -4 After Pa is below, pass H 2 , when the pressure reaches 1kPa, turn on the microwave source to excite the plasma, and the input power is 1.5KW; as the pressure increases, slowly increase the input power and feed CH 4 and N 2 , until the process required for stable deposition is achieved: microwave power is 8kW, H 2 、CH 4 and N 2 The flow rates are 300sccm, 20sccm and 0.5sccm, and the temperature is 1000°C. When the single crystal diamond seed crystal grows to 8.2-8.4mm along the height direction, reduce the air pressure and power until the air pressure and power reach 0...

Embodiment 3

[0047] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0048] 1) Primary deposition: Clean the single crystal diamond seed crystal with orientation (100) and size 10mm×10mm×1mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of the MPCVD device, wait for the vacuum chamber Chamber vacuum down to 1×10 - 5 After Pa is below, pass H 2 , when the air pressure reaches 0.8kPa, turn on the microwave source to excite the plasma, and the input power is 1.2KW; as the air pressure increases, slowly increase the input power and introduce CH 4 , N 2 and O 2 , until the process required for stable deposition is achieved: microwave power is 10kW, H 2 、CH 4 , N 2 and O 2 The flow rates are 200sccm, 20sccm, 0.4sccm and 2sccm respectively, and the temperature is 950°C. When the single crystal diamond seed crystal grows to 10.2-10.4mm along the height direction, reduce the air pressure a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is a method for enlarging the size and quantity of single crystal diamond seed crystals, which solves the problem of high technical difficulty in preparing large-size diamond single crystals. The present invention adopts the single crystal diamond with the orientation of (100) as the seed crystal, first grows the single crystal diamond into a square shape through one deposition, then cuts it into two isosceles triangular prisms along the diagonal, and polishes the cut surface as the growth surface Carry out secondary deposition to make the diamond grow along the direction of the vertical cutting plane, and then cut again along the diagonal and bottom of the newly grown square to form two large isosceles triangular prisms and an original small isosceles triangular prism. After the cutting surface of the waist triangular prism is polished, it is used as the growth surface for three times of deposition and growth, and finally cut along the vertical direction of the cutting surface to obtain multiple diamond seed crystals with an orientation of (100) and multiple times in size. The method of the invention is simple to operate, and can rapidly increase the size and quantity of single crystal diamonds at the same time.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a method for enlarging the size and quantity of single crystal diamond seed crystals. Background technique [0002] Single crystal diamond has excellent physical and chemical properties and is widely used in many fields such as industry, science and technology, national defense, and medical care. However, natural diamond reserves are small and expensive. Chemical vapor deposition (CVD) is currently the main method for synthesizing large-sized single crystal diamond. Under normal circumstances, the size of diamond single crystal synthesized by CVD depends on the size of the seed crystal, and the size of the synthesized single crystal is generally equal to or smaller than the seed crystal. Therefore, the preparation technology of large-size diamond single crystal and seed crystal has always been a technical problem to be solved urgently in this field. At presen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/20C30B29/04
CPCC30B25/186C30B25/205C30B29/04
Inventor 于盛旺高洁郑可黑鸿君马永周兵
Owner 山西国脉金晶碳基半导体材料产业研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com