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Method for enlarging size and quantity of monocrystal diamond seed crystals

A single crystal diamond, diamond technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of high technical difficulty of large-size diamond single crystal, to avoid interface defects and polycrystal, simple operation, The effect of increasing the cooling area

Active Publication Date: 2020-09-22
山西国脉金晶碳基半导体材料产业研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for enlarging the size and quantity of single crystal diamond seed crystals in order to solve the problem of high technical difficulty in preparing large-size diamond single crystals

Method used

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  • Method for enlarging size and quantity of monocrystal diamond seed crystals

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Embodiment 1

[0037] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0038] 1) One-time deposition: clean the single crystal diamond seed crystal with orientation (100), size length×width×height 5mm×5mm×1mm and molybdenum holder 2 specially matched with it, and put it into microwave plasma chemical vapor deposition In the vacuum chamber of the (MPCVD) device, the vacuum degree of the vacuum chamber is reduced to 1×10 -4 After Pa is below, pass H 2 , when the air pressure reaches 0.6kPa, turn on the microwave source to excite the plasma, and the input power is 0.8KW; as the air pressure increases, slowly increase the input power and introduce CH 4 , until the process required for stable deposition is achieved: microwave power is 5kW, H 2 and CH 4 The flow rates are 400sccm and 20sccm respectively, and the temperature is 850°C. When the single crystal diamond seed grows to 5.3mm in the height direction, reduce the air pressure ...

Embodiment 2

[0042] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0043] 1) Primary deposition: clean the single crystal diamond seed crystal with orientation (100) and size 8mm×8mm×2mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of MPCVD device, wait for the vacuum chamber The chamber vacuum is reduced to 5×10 -4 After Pa is below, pass H 2 , when the pressure reaches 1kPa, turn on the microwave source to excite the plasma, and the input power is 1.5KW; as the pressure increases, slowly increase the input power and feed CH 4 and N 2 , until the process required for stable deposition is achieved: microwave power is 8kW, H 2 、CH 4 and N 2 The flow rates are 300sccm, 20sccm and 0.5sccm, and the temperature is 1000°C. When the single crystal diamond seed crystal grows to 8.2-8.4mm along the height direction, reduce the air pressure and power until the air pressure and power reach 0...

Embodiment 3

[0047] A method for expanding the size and quantity of single crystal diamond seed crystals, comprising the steps of:

[0048] 1) Primary deposition: Clean the single crystal diamond seed crystal with orientation (100) and size 10mm×10mm×1mm and molybdenum carrier 2 specially matched with it, put them into the vacuum chamber of the MPCVD device, wait for the vacuum chamber Chamber vacuum down to 1×10 - 5 After Pa is below, pass H 2 , when the air pressure reaches 0.8kPa, turn on the microwave source to excite the plasma, and the input power is 1.2KW; as the air pressure increases, slowly increase the input power and introduce CH 4 , N 2 and O 2 , until the process required for stable deposition is achieved: microwave power is 10kW, H 2 、CH 4 , N 2 and O 2 The flow rates are 200sccm, 20sccm, 0.4sccm and 2sccm respectively, and the temperature is 950°C. When the single crystal diamond seed crystal grows to 10.2-10.4mm along the height direction, reduce the air pressure a...

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Abstract

The invention relates to a method for enlarging the size and quantity of monocrystal diamond seed crystals, and solves the problem of high difficulty of a large-size diamond monocrystal preparation technology. According to the invention, monocrystal diamond with an orientation of (100) is used as a seed crystal; firstly, growing monocrystal diamond into a square shape through primary deposition; then performing cutting into two isosceles triangular cylinders along a diagonal line, polishing a cutting surface to serve as a growth surface for secondary deposition, enabling the diamond to grow along the direction vertical to the cutting surface, then performing cutting again along the diagonal line and the bottom of the newly grown square so as to form two large isosceles triangular cylindersand an original small isosceles triangular cylinder, polishing the cutting surfaces of the obtained large isosceles triangular cylinders to serve as growth surfaces for third deposition growth, and finally performing cutting along the vertical direction of the cutting surface to obtain a plurality of diamond seed crystals with the orientation of (100) and the size enlarged by multiple times. Themethod is easy to operate, and the size and the number of the monocrystal diamond can be rapidly increased at the same time.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a method for enlarging the size and quantity of single crystal diamond seed crystals. Background technique [0002] Single crystal diamond has excellent physical and chemical properties and is widely used in many fields such as industry, science and technology, national defense, and medical care. However, natural diamond reserves are small and expensive. Chemical vapor deposition (CVD) is currently the main method for synthesizing large-sized single crystal diamond. Under normal circumstances, the size of diamond single crystal synthesized by CVD depends on the size of the seed crystal, and the size of the synthesized single crystal is generally equal to or smaller than the seed crystal. Therefore, the preparation technology of large-size diamond single crystal and seed crystal has always been a technical problem to be solved urgently in this field. At presen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/20C30B29/04
CPCC30B25/186C30B25/205C30B29/04
Inventor 于盛旺高洁郑可黑鸿君马永周兵
Owner 山西国脉金晶碳基半导体材料产业研究院有限公司
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