A method of fabricating a semiconductor structure

Abstract

The invention discloses a method for manufacturing a semiconductor structure, comprising: providing a substrate; forming a first type shallow trench and a second type shallow trench on the substrate, and the first type shallow trench The opening area is larger than the opening area of ​​the second type shallow trench; a first lining layer is formed in the first type shallow trench and the second type shallow trench; in the second type shallow trench forming a second liner layer, and the second liner layer is disposed on the first liner layer; and depositing an isolation medium in the first type shallow trench and the second type shallow trench. The performance of the semiconductor structure can be improved through the manufacturing method of the semiconductor structure provided by the invention.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] A shallow trench isolation structure (Shallow Trench Isolation, STI) is an important structure in an integrated circuit, which can prevent current leakage between adjacent semiconductor devices and play a role in other electrical properties. In the conductor process, some devices include different functional areas, which have different requirements for the width of the shallow trench isolation structure. It is necessary to form shallow trench isolation structures with different widths in different regions of the chip, but shallow trenches with larger widths are deposited. The deposition rate of the isolation dielectric is relatively slow, which causes depressions to occur easily during the formation of the shallow trench isolation structure, resulting in a decrease in the yield of the semic...

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Problems solved by technology

In the conductor process, some devices include different functional areas, which have different requirements for the width of the shallow trench isolation structure. It is necessary to form shallow trench isolation structures with different widths in different regions of the chip, but shallow trenches with larger widths are deposited. The isolation dielectric is deposited at a slow rate, which causes depressions to occur during the formation of the shallow trench isolation structure, resulting in a decrease in the yield of semiconductor devices

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