Unlock instant, AI-driven research and patent intelligence for your innovation.

Through silicon via (TSV)-based delay equalization device

A delay equalization, through-silicon via technology, applied in electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as complex circuit networks and large structural areas, and achieve high device utilization and integration. , the effect of low loss

Pending Publication Date: 2022-02-25
XIAN UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For high-order delay networks, due to the complex circuit network when integrating components, it faces the problem of large integrated structure area.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Through silicon via (TSV)-based delay equalization device
  • Through silicon via (TSV)-based delay equalization device
  • Through silicon via (TSV)-based delay equalization device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] The present invention is a delay equalization device based on through-silicon holes, which is a circuit network structure of a sixth-order 50 ps delay line, calculates relevant device values ​​in the circuit network according to the required delay, and performs structural design.

[0040] A delay equalization device based on through-silicon vias according to the present invention, the overall structure is eight double-layer interdigitated capacitors, interconnection key 6, interconnection layer 7, interconnection key 6 and six TSV inductors from top to bottom;

[0041] Such as figure 1 As shown, eight double-layer interdigitated capacitors are included: double-layer interdigitated capacitor C1, double-layer interdigitated capacitor C2, double-layer interdigitated capacitor C3, double-layer interdigitated capacitor C4, double-layer inte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a through silicon via (TSV)-based delay equalization device, which comprises six TSV inductors and eight double-layer interdigital capacitors, and comprises eight double-layer interdigital capacitor layers (top RDL), interconnection keys (copper), an interconnection layer, interconnection keys and six TSV inductors from top to bottom in sequence. The equalization device provided by the invention not only has stable delay performance and low loss at low frequency, but also is compact in structure and high in integration level.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a delay equalization device based on through-silicon holes. Background technique [0002] The networks we have discussed so far have features that are used to obtain the desired amplitude and frequency. The all-pass filter is also a very important class. This type of circuit network has a flat frequency response, but introduces a fixed phase shift and frequency. The all-pass filter is often called a delay equalizer. [0003] In terms of delay devices, an all-pass filter is available for analog group delay equalizers. An ideal form of an allpass network has constant amplitude and a specific group delay response, and an arbitrary group delay response can be achieved using a group delay equalizer. Equalizers can be used with narrower bandwidths and more selective filters. With the development of microelectronics technology, the characteristic size of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L23/522H03H1/00
CPCH01L23/645H01L23/642H01L23/5226H03H1/00H03H2001/0085
Inventor 王凤娟侯仓仓余宁梅杨媛朱樟明尹湘坤
Owner XIAN UNIV OF TECH