Supercharge Your Innovation With Domain-Expert AI Agents!

A high-temperature oxidation device with automatic water replenishment function

A high-temperature oxidation and automatic water replenishment technology, which is applied in chemical instruments and methods, non-electrical variable control, instruments, etc., can solve the problems of deionized water resistance value not meeting process requirements and affecting oxidation effect.

Active Publication Date: 2022-04-01
JIHUA LAB
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a high-temperature oxidation device with automatic water replenishment function, aiming to solve the problem that the resistance value of deionized water does not meet the process requirements due to human factors or external factors during the high-temperature oxidation process, thus affecting the oxidation effect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A high-temperature oxidation device with automatic water replenishment function
  • A high-temperature oxidation device with automatic water replenishment function
  • A high-temperature oxidation device with automatic water replenishment function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0033] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application relates to the field of semiconductor manufacturing, in particular, to a high-temperature oxidation device with an automatic water replenishment function, the device comprising: a bubbling device for injecting oxygen into high-temperature deionized water to generate moist high-temperature oxidizing gas; The high-temperature oxidation device with automatic water replenishment function also includes: a preheating device connected to the bubbling device for heating deionized water and supplying the high-temperature deionized water to the bubbling device, the preheating device A water resistance measurement sensor for detecting the resistance value of the deionized water inside is provided on it, and when the resistance value of the deionized water inside the preheating device is greater than the first preset threshold and / or less than the second preset threshold, the The deionized water in the preheating device. The present application monitors the resistance value of the deionized water in the preheating device in real time by setting a water resistance measuring sensor, and replaces the deionized water when the deionized water does not meet the process conditions.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular, to a high-temperature oxidation device with automatic water replenishment function. Background technique [0002] The semiconductor dielectric film deposition process uses thermal oxidation, chemical vapor deposition, and atomic layer deposition to obtain silicon oxide films. Among them, the thermal oxidation process is to place the Si wafer in a quartz glass reaction tube, inject high-purity oxygen at high temperature (900 ° C ~ 1200 ° C), and the oxygen reacts with the Si on the wafer surface to form a thin film. The thermal oxidation process is divided into three methods according to the oxidation atmosphere used: dry oxygen oxidation, water vapor oxidation and wet oxygen oxidation. Bubble bottle filled with high-purity deionized water, oxygen can carry a large amount of water vapor into the reaction chamber, water molecules and oxygen molecules can diffuse ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05D9/12H01L21/02C30B33/00
CPCG05D9/12H01L21/02238H01L21/02164C30B33/005
Inventor 毛朝斌罗骞黄吉裕胡承王慧勇
Owner JIHUA LAB
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com