SiC MOSFET sub-module unit crimping type package

Abstract

The invention discloses a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) sub-module unit crimping type package. The SiC MOSFET sub-module unit crimping type package comprises a SiC MOSFET sub-unit array, a grid disc spring, a connecting part, a PCB (Printed Circuit Board) substrate, a grid terminal, an auxiliary source terminal and a source bottom plate, the silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) subunit array is composed of M SiC MOSFET subunits; each SiC MOSFET subunit is connected with the upper surface of the PCB substrate through a plurality of grid disc springs and connecting parts, the lower surface of the PCB substrate is connected to the source bottom plate, the grid terminal is arranged on one side of the PCB substrate, the auxiliary source terminal is arranged on one side of the source bottom plate, and the grid terminal and the auxiliary source terminal are located in the same direction. The power density of the module is improved, the stress distribution of the chip is optimized, the reliability of the device is improved, the insulation level of the module is improved by filling the interior of the module with silica gel, and the module can be applied to the high-voltage field.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor packaging, and in particular relates to a SiC MOSFET sub-module unit crimping type packaging. Background technique [0002] As a wide bandgap power semiconductor device, SiC MOSFET has many advantages over traditional silicon devices, such as higher operating temperature, lower on-state loss, higher switching frequency and greater critical breakdown field strength. With the gradual promotion of the application of silicon carbide power devices, there is no mature and unified form for the packaging of high-voltage silicon carbide power devices. [0003] For the traditional crimping structure of silicon devices, the boss-type hard crimping is mainly used. Toshiba's IEGT series and Westcode's PressPack series mainly adopt the boss type hard crimping structure, and the highest voltage and current level reaches 4.5kV / 3kA. Although this structure solves the problem faced by the fragile bond...

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a SiC MOSFET sub-module unit crimping type package to overcome the problem that silicon carbide devices are difficult to carry out crimping type packaging, and at the same time solve the internal chip stress existing in the traditional boss type hard crimping package structure Unevenness and inability to use silicone gel insulation, the invention improves the power density of the module, uses silicone gel as the filling insulation material, improves the reliability of the device, and can be applied in the high-voltage field

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