Wafer-level package structure and manufacturing method of temperature-compensated surface acoustic filter
A surface acoustic filter, wafer-level packaging technology, applied in impedance networks, electrical components, etc., can solve the problems of filter chip failure, cumbersome manufacturing process, etc., to improve bonding quality, improve bonding quality and bonding Efficiency, the effect of avoiding adverse effects
Active Publication Date: 2022-04-15
深圳新声半导体有限公司
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[0006] The invention provides a temperature-compensated surface acoustic filter wafer-level packaging structure and manufacturing method, which is used to solve the cumbersome manufacturing process of directly using the temperature-compensated layer SiO2 as SiO2-Si bonding in the prior art, which easily leads to failure of the filter chip The problem:
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[0054] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0055] The embodiment of the present invention proposes a method for manufacturing a temperature-compensated surface acoustic filter wafer-level packaging structure. Grooves are made on the Si wafer to form a cavity structure above the IDT and above the PAD Metal (the depth of the groove can be precisely controlled. When it is deeper than the thickness of PAD Metal Figure 1 to Figure 15 As shown, the process of the manufacturing method of the temperature-compensated surface acoustic filter wafer-level packaging structure includes:
[0056] Step 1. Obtain a TC-SAW filter wafer 1000, and fabricate a filter IDT interdigitated structure 1100 on the TC-SAW filter wafer, ...
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Abstract
The present invention proposes a temperature compensation sound surface filter wafer -level packaging structure and manufacturing method.The manufacturing method includes obtaining TC造SAW filter wafers, making the filter IDT fork finger structure on the TC‑SAW filter wafer, the IDT electrical connection metal bar and the IDT reflecting grid side metal bar;TC滤SAW filter wafer, filter IDT fork finger structure, IDT electrical connection metal bar and IDT reflectric grid side metal strip on the upper surface of the metal strip covering a layer of temperature supplement SIO 2 ; Remove the temperature supplement SIO on the surface of the IDT electrical connection on the metal strip through the etching method 2 It is used to form a process process such as the contact window and the process process of setting the BUSBAR metal layer for the contact window.
Description
technical field [0001] The invention provides a temperature-compensated surface acoustic filter wafer-level packaging structure and a manufacturing method, belonging to the technical field of filter manufacturing. Background technique [0002] Temperature-compensated surface acoustic wave filter (TC-SAW), which naturally has a 1~1.5um SiO2 layer on the wafer surface as a temperature compensation layer, and the SiO2 layer is accurately controlled within the entire wafer. Otherwise, the frequency of the filter will be biased due to flattening and precise thickness control, and the SiO2 layer is a natural SiO2-Si bonding material fusion bonding. If this layer of SiO2 can be directly used to achieve SiO2-Si bonding and form a void The cavity structure will be a more excellent structure than the wafer-level packaging structure made of double-layer organic film. It has high bonding strength, good adhesion, good isolation from the external environment, and high reliability. The co...
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IPC IPC(8): H03H3/02H03H9/10H03H9/64
CPCH03H3/02H03H9/1064H03H9/64
Inventor 不公告发明人
Owner 深圳新声半导体有限公司