Characteristic structure for extracting dielectric material and extraction method thereof

A technology for extracting media and extraction methods, applied in the direction of dielectric property measurement, measuring devices, instruments, etc., can solve the problems of millimeter wave design frequency deviation, etc., and achieve the effect of accurate results, simple structure, and small errors

Pending Publication Date: 2022-03-11
矽杰微电子(厦门)有限公司
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, current substrate material manufacturers can only provide parameters within 10 GHz. As a result, frequency deviation often occurs in current millimeter wave designs.

Method used

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  • Characteristic structure for extracting dielectric material and extraction method thereof
  • Characteristic structure for extracting dielectric material and extraction method thereof
  • Characteristic structure for extracting dielectric material and extraction method thereof

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Embodiment Construction

[0041] The following description serves to disclose the present invention to enable those skilled in the art to carry out the present invention. The preferred embodiments described below are only examples, and those skilled in the art can devise other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents and other technical solutions without departing from the spirit and scope of the present invention.

[0042] In the preferred embodiment of the present invention, those skilled in the art should note that the resonator and copper involved in the present invention can be regarded as prior art.

[0043] preferred embodiment.

[0044] The invention discloses an extraction method for extracting the characteristic structure of a dielectric material. The absolute permittivity and loss tangent of the dielectric material are extracted by extracting the character...

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Abstract

The invention discloses a characteristic structure for extracting a dielectric material and an extraction method thereof, and the extraction method for extracting the characteristic structure of the dielectric material is used for extracting the absolute dielectric constant and the loss tangent of the dielectric material by extracting the characteristic structure of the dielectric material, and comprises the following steps: S1, arranging a U-shaped groove structure on a top layer, energy is input into the resonator through the U-shaped groove structure, so that resonance is generated in the resonator, and the resonance frequency and the quality factor are obtained by measuring the reflection coefficient of the whole structure. According to the characteristic structure for extracting the dielectric material and the extraction method thereof disclosed by the invention, the absolute dielectric constant and the loss tangent of the dielectric material are extracted through the resonator.

Description

technical field [0001] The invention belongs to the technical field of extracting characteristics of medium materials, and in particular relates to an extraction method for extracting characteristic structures of medium materials and a characteristic structure of extraction medium materials. Background technique [0002] With the rapid iteration of wireless technology, the current SiP (System-in-package, system-in-package) came into being. SiP belongs to wafer-level packaging, which can combine passive devices and active devices through dielectric board materials, greatly improving the integration level. But for the precise design of high-frequency circuits or microwave devices, the relative permittivity and loss tangent of the substrate material are crucial, especially in the millimeter wave range. However, current substrate material manufacturers can only provide parameters within 10 GHz. As a result, frequency deviation often occurs in the current millimeter wave design....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/26
CPCG01R27/2694G01R27/2688G01R27/2623
Inventor 隋磊卢煜旻朱欣恩
Owner 矽杰微电子(厦门)有限公司
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