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IGBT device and manufacturing method thereof

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high conduction voltage drop of IGBT, achieve the effects of reducing conduction voltage drop, optimizing performance, and reducing resistance

Pending Publication Date: 2022-03-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The application provides an IGBT device and its manufacturing method, which can solve the problem of high conduction voltage drop of the IGBT

Method used

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  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof

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Embodiment Construction

[0036] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0037] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The invention provides an IGBT device. The IGBT device comprises a substrate, an epitaxial layer located on the substrate, a plurality of blocking structures, a plurality of grids, a plurality of base regions and an emitter region. A plurality of grooves are formed in the epitaxial layer; each blocking structure is located at the bottom of each groove; each grid electrode fills each groove; each base region is located in the epitaxial layer and is located between every two adjacent grids; the emitter region is in the base region. The invention further provides a manufacturing method of the IGBT device. According to the invention, the blocking structure is arranged at the bottom of the grid electrode, so that the potential of the corresponding epitaxial layer region at the bottom of the grid electrode can be increased, and holes injected into the collector region on the back surface of the device can be blocked. Furthermore, the blocking structure located at the bottom of the grid increases the concentration of holes in the epitaxial layer, the conduction voltage drop of the IGBT device can be reduced, and therefore the overall FOM (figure of merit) of the IGBT device is improved.

Description

technical field [0001] The present application relates to the technical field of IGBT devices, and in particular, to an IGBT device and a manufacturing method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Isolated Gate Bipolar Transistor) is one of the important switching components for energy control and conversion of power electronic systems. Its performance directly affects the conversion efficiency, volume and weight of power electronic systems. The performance of IGBT devices is always developing in the direction of higher current density, smaller on-state voltage drop, and lower turn-off loss. [0003] The traditional IGBT is based on the front Trench MOS structure, while the new IGBT developed by Hua Hong Hongli is based on the front super junction structure. The IGBT based on the front super junction can well compromise the breakdown voltage and saturation voltage drop. However, IGBTs based on front superjunctions currently suffer f...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0603H01L29/0684H01L29/7393H01L29/66325
Inventor 潘嘉张同博孙鹏杨继业邢军军陈冲黄璇姚一平
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP