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Formation method of semiconductor structure

A semiconductor and sidewall technology, applied in the field of semiconductor structure formation, can solve the problems that the performance of the flash memory structure needs to be further improved, and achieve the effect of improving performance

Pending Publication Date: 2022-03-22
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The performance of the existing flash memory structure needs to be further improved

Method used

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  • Formation method of semiconductor structure
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  • Formation method of semiconductor structure

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Embodiment Construction

[0028] It should be noted that the "surface" and "upper" in this specification are used to describe the relative positional relationship in space, and are not limited to direct contact.

[0029] As mentioned in the background, the performance of the existing flash memory structure needs to be further improved. A method for forming a semiconductor structure is now described and analyzed.

[0030] Figure 1 to Figure 2 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0031] Please refer to figure 1 , providing a substrate, the substrate includes a base 100, the base 100 includes a storage area I and a peripheral area II, and the substrate further includes a first gate arranged along a first direction X on the storage area I pole 101, a second gate 102, a third gate 103, and several fourth gates 201 arranged along the first direction X on the peripheral region II, located between the first gate 101 and the There is a first...

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Abstract

The invention discloses a forming method of a semiconductor structure. The forming method comprises the steps of forming first dielectric material layers and first side wall material layers located on the first dielectric material layers on side walls and top surfaces of a first grid electrode, a plurality of second grid electrodes and a plurality of third grid electrodes and on a substrate; etching back the first side wall material layer until the surface of the first dielectric material layer is exposed, and forming a first side wall on the side wall of the first opening and the side wall of the third grid electrode; forming a storage drain region in the storage region below the first opening by taking the first side wall as a mask; after the storage drain region is formed, removing the first side wall in the first opening; after the first side wall in the first opening is removed, a second side wall is formed on the side wall of the first opening and the side wall of the third grid electrode, the thickness of the second side wall is smaller than that of the first side wall, filling of an interlayer dielectric layer between the first grid electrode and the second grid electrode is facilitated, and therefore the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] Flash Memory (Flash Memory) is a non-volatile memory, which can keep data for a long time even when there is no current supply, even if the power is turned off, the data will not be lost. Flash memory is mainly divided into two types, NOR and NAND, commonly referred to as NORFlash and NAND Flash. Among them, NOR Flash is also called encoded flash memory. Because of its features such as direct code execution, high reliability, and fast reading speed, it has become the mainstream non-volatile memory in flash memory technology. [0003] With the continuous development of integrated circuit manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions, integrated circuit chips are developing towards higher device density and highe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11521H01L27/11526H10B41/30H10B41/40
CPCH10B41/40H10B41/30
Inventor 薛立平段松汉齐翔羽佟宇鑫顾林王虎
Owner HUA HONG SEMICON WUXI LTD
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