Surge test method capable of automatically repeating surges
A technology of surge testing and automatic repetition, which is applied in the direction of single semiconductor device testing, etc., and can solve problems such as device impact and frequent manual debugging
Pending Publication Date: 2022-04-12
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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Problems solved by technology
During the operation of the entire circuit, the device may be subjected to multiple surge currents
At present, the traditional test platform used to detect the surge performance of devices still needs manual frequent debugging to perform repeated surge tests
Method used
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Embodiment Construction
[0020] In order to describe the present invention in more detail, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0021] The schematic diagram of the main circuit of the repetitive surge test platform is as follows: figure 1 As shown, the whole circuit includes the left half as the charging circuit, and the right half as the surge generating circuit. The charging circuit includes a DC power supply V1, a switch S1, a capacitor C, and a current-limiting resistor R, and the four parts are connected in series in the above order. The surge generating circuit includes capacitor C, switch S2, inductor L and the device under test, and the four parts are connected in series according to the above sequence. The source of the device under test is connected to the inductor L, and the drain is connected to the capacitor C. One end of the switch S2 is connected between the switch S1 and the capacitor C, and o...
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The invention discloses a surge test method capable of automatically repeating surges, which comprises the following steps of: placing a power semiconductor device to be tested on a test board, so that the tested device is safely and reliably connected with a surge current output end of a surge test platform; then, the number of surge cycles, the interval time of two surge tests and the amplitude and the cycle of surge current are set; during a surge test, source and drain voltages and surge current of a tested device are measured, and electrical parameters such as resistance and a transfer characteristic curve between electrodes are measured before and after the surge test. The electrical characteristics of a tested device subjected to surge current impact are generally changed, and whether the device is invalid or not and the performance degradation degree of the device are judged according to the change of the measured electrical parameters. According to the invention, the problem that a traditional surge test platform based on an LC oscillation principle can only carry out a single surge test is solved, and the test platform capable of realizing automatic repeated surge is obtained by selecting a proper switching device and designing a reasonable surge current generation circuit.
Description
technical field [0001] The invention belongs to the field of testing power semiconductor devices, and in particular relates to a surge testing method capable of realizing automatic repeated surges. Background technique [0002] Since the 1980s, silicon-based IGBTs have become the dominant power device in power electronics applications. However, with the continuous advancement of technology, traditional power devices have approached the limit of silicon materials. In order to break through the limit of silicon materials, semiconductor devices with wide bandgap, such as SiC devices and GaN devices, have become a hot research topic. As a wide bandgap semiconductor material, SiC material has the advantages of high breakdown field strength, high saturation electron drift rate, and high thermal conductivity. Therefore, SiC power semiconductor devices can realize high-voltage, high-power, high-frequency, and high-temperature applications, which can improve Efficiency of power ele...
Claims
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Inventor 罗皓泽崔瑞杰康建龙严辉强
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT