Electro-optical silicon-based modulator traveling wave electrode with suspended metal shielding wire
A metal shielding, traveling wave electrode technology, applied in nonlinear optics, instruments, optics, etc., can solve the problems of low degree of freedom, difficult design indicators, low microwave loss, etc., to achieve low microwave loss, reduce electric field distribution, and save development. cost effect
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Embodiment 1
[0044] The schematic diagram of the electro-optic silicon-based modulator coplanar waveguide type traveling wave electrode with suspended metal shielding wires proposed in the embodiment of the present invention is shown in the description of the drawings figure 1 with figure 2shown. It consists of a signal line 101, a first ground plane 102, a second ground plane 103, an optical waveguide 104, a buried oxide layer 105, a substrate layer 106, and a suspended metal shielding line 107 (including 107_1 to 107_n, wherein n is an integer greater than 1) and stacked vias 108 (including 108_1 to 108_m, wherein m is an integer greater than 1). The optical waveguide is located above the buried oxide layer and is composed of P-type doped and N-type doped silicon materials, and is connected to the upper signal line and the first ground plane through stacked via holes. The second ground plane is not connected to the optical waveguide. The signal line is located at the same level as th...
Embodiment 2
[0047] The schematic diagram of the electro-optic silicon-based modulator coplanar slot-line type traveling wave electrode with suspended metal shielding lines proposed in the embodiment of the present invention is shown in the description of the drawings image 3 shown. It consists of a signal line 201, a first ground plane 202, an optical waveguide 204, a buried oxide layer 205, a substrate layer 206, a suspended metal shielding line 207 (including 207_1 to 207_n, wherein n is an integer greater than 1) and stacked vias 208 ( Including 208_1 to 208_m, wherein m is an integer greater than 1). The optical waveguide is located above the buried oxide layer and is composed of P-type doped and N-type doped silicon materials, and is connected to the upper signal line and the first ground plane through stacked via holes. The signal line is located on the same level as the first ground plane. The suspended metal shielding line is located between the optical waveguide and the horizo...
Embodiment 3
[0050] The schematic diagram of the electro-optic silicon-based modulator coplanar waveguide traveling-wave electrode with suspended metal shielding wires and track electrodes proposed in the embodiment of the present invention is shown in the description of the drawings Figure 4 shown. It consists of a signal line 301, a first ground plane 302, a second ground plane 303, an optical waveguide 304, a buried oxide layer 305, a substrate layer 306, and a suspended metal shielding line 307 (including 307_1 to 307_n, wherein n is an integer greater than 1) , stacked vias 308 (including 308_1 to 308_m, wherein m is an integer greater than 1) and track electrodes 309_1 to 309_k (k is an integer greater than 1). The optical waveguide is located above the buried oxide layer and is composed of P-type doped and N-type doped silicon materials, and is connected to the upper signal line and the first ground plane through stacked via holes. The second ground plane is not connected to the o...
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