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Back contact CdTe solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of complex and lengthy laser scribing process, dead zone, etc., so as to avoid laser scribing process and avoid efficiency loss , The effect of simple process

Pending Publication Date: 2022-04-15
CHINA TRIUMPH INT ENG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a back contact CdTe solar cell and its manufacturing method, which is used to solve the complex and lengthy laser scribing process in the prior art for CdTe solar cell components, forming The "dead zone" problem

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  • Back contact CdTe solar cell and manufacturing method thereof
  • Back contact CdTe solar cell and manufacturing method thereof
  • Back contact CdTe solar cell and manufacturing method thereof

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Embodiment Construction

[0036] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides a back contact CdTe solar cell and a manufacturing method thereof, and the method comprises the steps: providing a transparent substrate, and forming a CdTe light absorption layer on the transparent substrate; activating the CdTe light absorption layer by adopting an activation annealing process; forming n-type semiconductor layers and p + heavily doped semiconductor layers which are alternately arranged on the surface of the CdTe light absorption layer, wherein the n-type semiconductor layers and the p + heavily doped semiconductor layers are separated by insulating patterns; metallization is carried out on the n-type semiconductor layer and the p + heavily doped semiconductor layer, a metal electrode alpha connected with the n-type semiconductor layer area and a metal electrode beta connected with the p + heavily doped semiconductor layer area are formed, and the metal electrode alpha and the metal electrode beta are arranged in an interdigitated mode.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cells, in particular to a back-contact CdTe solar cell and a manufacturing method thereof. Background technique [0002] Cadmium telluride solar cells, compared with monocrystalline silicon solar cells, have the advantages of convenient fabrication, low cost and lighter weight. Cadmium telluride thin-film solar cells are referred to as CdTe cells, which are thin-film solar cells based on the heterojunction of p-type CdTe and n-type CdSe. A general standard cadmium telluride thin film solar cell consists of five layers: back electrode, back contact layer, CdTe absorber layer, CdTe window layer, TCO layer. The production cost of cadmium telluride thin-film solar cells is far lower than that of crystalline silicon and other solar cell technologies. Secondly, it is very consistent with the solar spectrum and can absorb more than 95% of sunlight. [0003] In the process of large-scale industrial...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/073H01L31/18
CPCH01L31/073H01L31/1836H01L31/022458H01L31/035272Y02E10/543Y02P70/50
Inventor 彭寿殷新建汪元元马立云陈瑛吴一民方建鹏储静远盖琳琳
Owner CHINA TRIUMPH INT ENG
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