Semiconductor device and forming method thereof

Abstract

A semiconductor device and a method of forming the same are described. A method of forming a semiconductor device having a controlled doping gate dielectric layer includes forming a gate dielectric layer over a fin structure, forming a diffusion barrier layer over the gate dielectric layer, and forming a dopant source layer over the diffusion barrier layer. The gate dielectric layer includes an interface layer on the fin structure and a high-k dielectric layer on the interface layer. The dopant of the dopant source layer diffuses into the gate dielectric layer. The method further includes doping a portion of the interface layer with a dopant and removing the dopant source layer.

Description

technical field [0001] The present disclosure relates to a semiconductor device and a method of forming the same, and more particularly to a semiconductor device with a controlled doped gate dielectric layer and a method of forming the same. Background technique [0002] With the progress of semiconductor technology, the demand for higher storage capacity, faster processing system, higher performance and lower cost has gradually increased. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices, such as MOSFETs including planar MOSFETs and FinFETs. Such downsizing has created the challenge of improving the performance of semiconductor devices. Contents of the invention [0003] An embodiment of the present disclosure discloses a method, which includes forming a gate dielectric layer on the fin structure, forming a diffusion barrier layer on the gate dielectric layer, forming a dopant source layer on the diffusion barrier lay...

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Problems solved by technology

Such scaling down has created the challenge of improving the performance of semiconductor devices

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