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Floating switch driving circuit and method

A floating switch and drive circuit technology, applied in electronic switches, electrical components, pulse technology, etc., can solve problems such as complex structure, complex and difficult gate drive circuit design

Pending Publication Date: 2022-05-10
UNIVERSITY OF MACAU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the dynamic change of the potential at both ends of the floating switch makes the design of its gate drive circuit complicated and difficult.
[0004] The existing technology uses a double-branch structure to detect the high or low voltage at both ends of the floating switch to generate a suitable driving voltage, but it has the disadvantages of complex structure and the limitation of using a double-branch structure

Method used

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  • Floating switch driving circuit and method
  • Floating switch driving circuit and method
  • Floating switch driving circuit and method

Examples

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Embodiment 1

[0072] see figure 1 , figure 1 A schematic structural diagram of a PMOS transistor floating switch M1 provided in an embodiment of the present application. Floating switches are usually MOS transistors, and are usually used in power transmission stages of some power converters to connect different power components in switch mode. Its characteristic is that the relative magnitude of the voltage across the source and drain of the floating switch will change dynamically. Generally, the turn-on and turn-off of the MOS transistor is controlled by controlling the voltage between the gate and the source. For the PMOS tube, the gate-source voltage Ugs<0 means it is turned on, and the gate-source voltage Ugs≥0 means it is turned off. However, since the source and drain of the floating switch are prone to dynamic high and low potential changes, that is, low and high voltages appear alternately at both ends of the switch, making it difficult to control the voltage between the gate and...

Embodiment 2

[0111] In order to solve the above technical problems, the present application also provides a driving circuit corresponding to the floating switch of the NMOS transistor. see Figure 7 , Figure 7 A schematic structural diagram of an NMOS transistor floating switch M2 provided in an embodiment of the present application. For NMOS transistors, the gate-source voltage Ugs>0 means it is turned on, and the gate-source voltage Ugs≤0 means it is turned off. see figure 2 The floating switch driving circuit applied to NMOS transistors also includes a reference voltage unit 21 , a timing control unit 22 , a bootstrap unit 23 and a driving voltage control unit 24 . One end of the reference voltage unit 21 is used to connect any one of the source or drain of the floating switch, and the other end of the reference voltage unit 21 is connected to the drive voltage control unit 24; the bootstrap unit 23 is respectively The timing control unit 22 is connected to the driving voltage con...

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Abstract

The invention provides a floating switch driving circuit and method. The floating switch driving circuit comprises a reference voltage unit, a time sequence control unit, a bootstrap unit and a driving voltage control unit, one end of the reference voltage unit is used for being connected with any one of the source electrode or the drain electrode of the floating switch, and the other end of the reference voltage unit is connected with the driving voltage control unit; the bootstrap unit is respectively connected with the time sequence control unit and the driving voltage control unit; the driving voltage control unit is connected with the grid electrode of the floating switch, the driving voltage control unit comprises a conduction subunit and a turn-off subunit, and the conduction subunit comprises four cross-coupled MOS tubes. According to the floating switch driving circuit, the voltage of the source electrode or the drain electrode, connected with the reference voltage unit, in the floating switch serves as the reference voltage, appropriate grid driving voltage is provided for the floating switch, and on and off control over the floating switch is accurately achieved.

Description

technical field [0001] The present application relates to the field of circuit control, in particular to a floating switch driving circuit and method. Background technique [0002] The floating switch is divided into two different types: an N-type metal oxide semiconductor (Negative channel Metal Oxide Semiconductor, NMOS for short) tube and a P-type metal oxide semiconductor (Positive channel Metal Oxide Semiconductor, PMOS for short) tube. Floating switches are commonly used in power transfer stages of some power converters to connect different power components in switch mode. [0003] The characteristic of the floating switch is that the relative magnitude of the voltage across the source and drain of the MOS transistor will change dynamically, that is, low / high voltages will appear alternately at both ends of the floating switch. In order to achieve accurate on-off control of the floating switch, it is necessary to clearly judge the potential level at both ends of the f...

Claims

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Application Information

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IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 江洋罗文基麦沛然马许愿
Owner UNIVERSITY OF MACAU
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