Method for improving in-plane thickness uniformity of wafer
A wafer, uniform technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problem of poor thickness uniformity, and achieve the effect of improving thickness uniformity
Pending Publication Date: 2022-05-13
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
However, due to its inherent characteristics, that is, the airflow at the edge is more sufficient than the airflow in the middle, resulting in a gradient thinning from the edge to the middle of the wafer, resulting in poor in-plane thickness uniformity of the same wafer, which is of great importance to the ALD process. a big challenge
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[0032] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0033] see Figure 7 , the present invention provides a method for improving the in-plane thickness uniformity of the wafer 100, comprising:
[0034] In step 1, a deposition machine and a wafer 100 are provided, and the wafer 100 is placed in a furnace tube inside the deposition machine;
[0035] In a possible implementation manner, the deposition machine in step 1 is an atomic layer vapor deposition machine.
[0036] In another pos...
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The invention provides a method for improving in-plane thickness uniformity of a wafer. The method comprises the following steps: providing a deposition machine table and the wafer, and placing the wafer in a furnace tube in the deposition machine table; forming a growth layer on the wafer by using a deposition machine; introducing etching gas into the furnace tube, and etching the growth layer by using the etching gas; removing the etching gas and byproducts generated by the etching gas and the growth layer; and forming another growth layer on the growth layer for multiple times, and repeatedly introducing the etching gas into the furnace tube and then removing by-products generated after etching to form multiple growth layers on the wafer. According to the method, the etching gas is introduced into the circulation formed by each growth layer, so that the gradient thinning trend from the edge to the middle of the wafer is reduced, and the in-plane thickness uniformity of the wafer is further improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the in-plane thickness uniformity of a wafer. Background technique [0002] As the critical dimensions of semiconductor devices decrease day by day, the improvement of yield rate requires higher and higher precision of the process. Furnace tube atomic vapor deposition equipment makes full use of the surface saturation reaction and is inherently capable of thickness control and high stability. However, due to its inherent characteristics, the airflow at the edge is more sufficient than the airflow in the middle, resulting in a gradient from the edge to the middle of the wafer. Thinning, resulting in poor in-plane thickness uniformity of the same wafer, thus limiting its development. [0003] ALD-Atomic layer deposition (ALD-Atomic layer deposition) makes full use of the surface saturation reaction, which is inherently capable of thickness control and...
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IPC IPC(8): H01L21/311H01L21/02C23C16/34C23C16/52
CPCH01L21/31116H01L21/0217H01L21/0228C23C16/345C23C16/52
Inventor 王银帅
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD